MT29F16G16ADACAH4-IT:C TR

Product Overview

Category

MT29F16G16ADACAH4-IT:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F16G16ADACAH4-IT:C TR offers a storage capacity of 16 gigabits (2 gigabytes), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: It provides reliable data retention and endurance, ensuring the integrity of stored information.
• Low power consumption: The MT29F16G16ADACAH4-IT:C TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This product comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F16G16ADACAH4-IT:C TR is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 gigabits (2 gigabytes)
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F16G16ADACAH4-IT:C TR has a specific pin configuration for proper connectivity. The following table outlines the pin assignments:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | A0-A11 | Address Inputs | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | CE# | Chip Enable | | 7 | RE# | Read Enable | | 8 | WE# | Write Enable | | 9-16 | DQ0-DQ7 | Data Input/Output |

Functional Features

• Page Program: The MT29F16G16ADACAH4-IT:C TR supports page programming, allowing data to be written in small increments.
• Block Erase: It enables block erase operations, which can erase a large amount of data simultaneously.
• Random Access: This NAND flash memory allows random access to any location within the memory array, facilitating efficient data retrieval.
• Error Correction Code (ECC): The product incorporates ECC algorithms to detect and correct errors, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: Frequent write operations may reduce the lifespan of the memory cells.
• Susceptible to physical damage: NAND flash memory can be sensitive to electrostatic discharge (ESD) and mechanical stress.

Working Principles

The MT29F16G16ADACAH4-IT:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells consist of floating-gate transistors that can retain charge, representing binary data (0s and 1s). The data is accessed by applying appropriate voltages to the control pins and reading or writing the charge levels in the memory cells.

Detailed Application Field Plans

The MT29F16G16ADACAH4-IT:C TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F16G08ABACAWP-IT: This model offers a lower storage capacity of 8 gigabits but shares similar characteristics and specifications.
• MT29F32G08CBACAWP-IT: With a higher storage capacity of 32 gigabits, this alternative model provides increased memory space for data storage.
• MT29F64G08CBACAWP-IT: This model offers an even larger storage capacity of 64 gigabits, suitable for applications requiring extensive data storage