MT29F1G08ABBDAH4-ITX:D TR

Product Overview

Category

MT29F1G08ABBDAH4-ITX:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBDAH4-ITX:D TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Compact package: The MT29F1G08ABBDAH4-ITX:D TR comes in a compact form factor, allowing for easy integration into various electronic devices.
• Durable design: This NAND flash memory is built to withstand harsh environmental conditions, ensuring long-term reliability.

Packaging/Quantity

The MT29F1G08ABBDAH4-ITX:D TR is typically packaged in a small surface-mount package. It is available in reel packaging, with a standard quantity of 2500 units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-I48

Detailed Pin Configuration

The MT29F1G08ABBDAH4-ITX:D TR has a total of 48 pins arranged in a TSOP package. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. WE#
21. RE#
22. WP#
23. R/B#
24. NC
25. IO0
26. IO1
27. IO2
28. IO3
29. IO4
30. IO5
31. IO6
32. IO7
33. GND
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F1G08ABBDAH4-ITX:D TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which can erase a large amount of data simultaneously.
• Read Operation: The product provides fast and reliable read operations, allowing for quick access to stored data.
• Wear-Leveling Algorithm: The MT29F1G08ABBDAH4-ITX:D TR incorporates a wear-leveling algorithm, distributing write operations evenly across the memory cells to extend the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact package
• Durable design

Disadvantages

• Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F1G08ABBDAH4-ITX:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells are organized into pages and blocks, allowing for efficient read and write operations. When data is written, it is stored by charging or discharging the floating gate within each memory cell. During read operations, the charge level of the floating gate is measured to determine the stored data.

Detailed Application Field Plans

The MT29F1G08ABBDAH4-ITX:D TR is widely used in various electronic devices that require high-capacity data storage. Some of the key application fields include:

1. Smartphones and tablets: The NAND flash memory is essential for storing operating systems, applications, and user data in mobile devices.
2. Solid-state drives (SSDs): This product is commonly used as primary storage in SSDs, providing fast and reliable data access.
3. Digital cameras: The MT29F1G