MT29F1G08ABBEAH4:E TR

Product Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory for long-term data retention
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 25 megabytes per second (read), up to 10 megabytes per second (write)

Pin Configuration

The MT29F1G08ABBEAH4:E TR chip has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write enable
6. CE#: Chip enable
7. RE#: Read enable
8. CLE: Command latch enable
9. ALE: Address latch enable
10. R/B#: Ready/busy status
11. WP#: Write protect
12. RP#: Reset/power down
13. NC: No connection

Functional Features

• High-speed data transfer for efficient read/write operations
• Error correction codes (ECC) for data integrity
• Block management algorithms for wear leveling and bad block management
• Internal voltage generation for simplified power supply requirements
• Support for various command sets and features for flexible usage

Advantages and Disadvantages

Advantages: - High capacity allows for ample data storage - Fast read/write speeds enhance overall system performance - Low power consumption prolongs battery life in portable devices - Reliable data retention ensures long-term usability - Flexible command sets and features cater to diverse application requirements

Disadvantages: - Limited endurance due to the finite number of program/erase cycles - Relatively higher cost compared to other memory technologies - Requires specialized programming algorithms for optimal performance

Working Principles

The MT29F1G08ABBEAH4:E TR chip utilizes NAND flash technology to store data. It consists of a grid of memory cells, each capable of storing multiple bits of information. These cells are organized into blocks, which can be individually erased or programmed.

During write operations, data is stored by applying electrical charges to specific memory cells. Reading involves detecting the charge levels within the cells to retrieve the stored data. The chip employs error correction codes (ECC) to ensure data integrity and block management algorithms to evenly distribute wear across the memory cells.

Detailed Application Field Plans

The MT29F1G08ABBEAH4:E TR chip finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Its high capacity, fast data transfer rates, and reliability make it suitable for data-intensive applications that require non-volatile storage.

Alternative Models

• MT29F1G08ABBEAH4:E
• MT29F1G08ABBEAH4-IT:E
• MT29F1G08ABBEAH4-ITE:E
• MT29F1G08ABBEAH4-ITE:G
• MT29F1G08ABBEAH4-ITE:J

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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