MT29F1G16ABBDAH4-IT:D TR

Product Overview

Category

The MT29F1G16ABBDAH4-IT:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBDAH4-IT:D TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F1G16ABBDAH4-IT:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually supplied in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F1G16ABBDAH4-IT:D TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. VCCQ: Power supply voltage for I/O pins
3. WE# (Write Enable): Input control signal for write operations
4. CLE (Command Latch Enable): Input control signal for command latch
5. A0-A18: Address inputs
6. DQ0-DQ15: Data input/output pins
7. RE# (Read Enable): Input control signal for read operations
8. WP# (Write Protect): Input control signal for write protection
9. R/B# (Ready/Busy): Output status signal indicating device readiness
10. CE# (Chip Enable): Input control signal for chip enable

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Functional Features

• High-speed data transfer: The MT29F1G16ABBDAH4-IT:D TR offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This product utilizes a wear-leveling algorithm to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes a bad block management system that identifies and avoids defective memory blocks, enhancing overall performance.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan.
• Susceptible to data loss: Power interruptions or improper handling during write operations can lead to data corruption or loss.

Working Principles

The MT29F1G16ABBDAH4-IT:D TR operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages, blocks, and planes.

During a write operation, data is programmed into the memory cells by applying appropriate voltages. Reading involves sensing the voltage levels stored in the cells to retrieve the stored data. The device utilizes various control signals and algorithms to manage data storage, retrieval, and error correction.

Detailed Application Field Plans

The MT29F1G16ABBDAH4-IT:D TR finds applications in a wide range of electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

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• MT29F1G08ABBDAWP-IT:D TR
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• MT29F1G08ABBDAWP-IT:J TR

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