MT29F2G16AABWP-ET TR

Product Overview

Category

MT29F2G16AABWP-ET TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G16AABWP-ET TR offers a storage capacity of 2 gigabits (2 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F2G16AABWP-ET TR comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F2G16AABWP-ET TR is typically packaged in tape and reel format. Each reel contains a specific quantity of NAND flash memory chips, usually around 1000 units.

Specifications

• Storage Capacity: 2 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F2G16AABWP-ET TR is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. WE#
21. RE#
22. WP#
23. R/B#
24. DQ0
25. DQ1
26. DQ2
27. DQ3
28. DQ4
29. DQ5
30. DQ6
31. DQ7
32. VSS
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F2G16AABWP-ET TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read Operation: This NAND flash memory allows for fast and reliable reading of stored data.
• Error Correction: Advanced error correction techniques ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F2G16AABWP-ET TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, voltages are applied to specific pins to access and modify the stored information.

Detailed Application Field Plans

The MT29F2G16AABWP-ET TR is widely used in various electronic devices that require non-volatile storage for data retention. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, offering fast boot times and data access.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT
2. MT29F2G08ABBEAH4-IT:E
3. MT29F2G08ABBEAH4-ITE:E
4. MT29F2