MT29F4G08ABADAH4-IT:D

Product Overview

Category

MT29F4G08ABADAH4-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABADAH4-IT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABADAH4-IT:D is typically packaged in a surface-mount TSOP (Thin Small Outline Package) or BGA (Ball Grid Array) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 MB/s (Read), Up to 100 MB/s (Write)
• Endurance: Up to 10,000 Program/Erase Cycles
• Data Retention: Up to 10 Years

Detailed Pin Configuration

The MT29F4G08ABADAH4-IT:D has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. WP: Write protect
9. R/B: Ready/Busy status
10. DQ0-DQ7: Data input/output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data.
• Random Access: Provides random access to any location within the memory array.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life.
• Compact package facilitates integration into small form factor devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit compared to alternative memory solutions.

Working Principles

The MT29F4G08ABADAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the manipulation of individual memory cells.

Detailed Application Field Plans

The MT29F4G08ABADAH4-IT:D finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-IT:E
2. MT29F4G08ABADAH4-IT:C
3. MT29F4G08ABADAH4-IT:B
4. MT29F4G08ABADAH4-IT:A

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

In conclusion, the MT29F4G08ABADAH4-IT:D is a NAND flash memory product with high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices and offers advantages such as low power consumption and compact packaging. However, it has limitations in terms of endurance and cost compared to alternative memory solutions.