MT29F4G08ABBEAH4:E

Product Overview

Category

MT29F4G08ABBEAH4:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBEAH4:E offers a storage capacity of 4 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product ensures reliable performance with built-in error correction codes (ECC) that help maintain data integrity.
• Low power consumption: The MT29F4G08ABBEAH4:E is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08ABBEAH4:E is typically packaged in surface-mount technology (SMT) packages. The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F4G08ABBEAH4:E has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. ALE
8. CLE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase Operations: The MT29F4G08ABBEAH4:E supports efficient read, program, and erase operations at the page level, allowing for flexible data management.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Wear-Leveling: The NAND flash memory employs wear-leveling techniques to evenly distribute write and erase cycles across the memory cells, preventing premature cell degradation.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, ensuring reliable data storage by avoiding the use of defective memory areas.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance with ECC
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Susceptible to data corruption: While ECC helps maintain data integrity, NAND flash memory is more prone to data corruption compared to other storage technologies.

Working Principles

The MT29F4G08ABBEAH4:E utilizes the principles of NAND flash memory technology. It consists of a grid-like structure of memory cells, where each cell stores multiple bits of data. The memory cells are organized into pages and blocks, allowing for efficient read, program, and erase operations. When data is written, the memory cells are programmed by applying electrical charges to specific locations within the cells. To erase data, the entire block is cleared simultaneously. Reading data involves detecting the presence or absence of charges in the memory cells.

Detailed Application Field Plans

The MT29F4G08ABBEAH4:E can be used in various applications, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computer