MT29F4G16ABAEAH4:E

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: Integrated circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Varies based on manufacturer's specifications

Specifications

• Capacity: 4 gigabits (Gb)
• Organization: 512 megabytes (MB) x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Access Time: 25 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 10 years

Detailed Pin Configuration

The MT29F4G16ABAEAH4:E follows a standard pin configuration for parallel flash memory devices. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RE#: Read enable control
8. CLE: Command latch enable
9. ALE: Address latch enable
10. WP#: Write protect control
11. RY/BY#: Ready/busy status output
12. RP#/VP#: Reset/power down control
13. NC: No connection
14. VSS: Ground

Functional Features

• Page Program Operation: Allows data to be programmed in page mode, enhancing write performance.
• Block Erase Operation: Enables erasing of large blocks of data simultaneously, improving efficiency.
• Random Access: Provides fast read access to any location within the memory array.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data retrieval.
• Bad Block Management: Includes mechanisms to identify and manage defective blocks, ensuring data integrity.

Advantages

• High Capacity: Offers a large storage capacity suitable for various applications.
• Fast Read/Write Speeds: Facilitates quick data transfer and retrieval operations.
• Non-volatile: Retains data even when power is disconnected.
• Reliable: Incorporates error correction techniques to ensure data accuracy.
• Compact Package: Comes in a small form factor, making it suitable for space-constrained designs.

Disadvantages

• Limited Endurance: The flash memory has a finite number of program/erase cycles before it may become unreliable.
• Higher Cost: Compared to other memory technologies, flash memory can be relatively more expensive.
• Limited Data Retention: Although data retention is typically long, it is not indefinite and may degrade over time.

Working Principles

The MT29F4G16ABAEAH4:E utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which alters the threshold voltage of a memory cell. When reading data, the stored charge is measured to determine the logic state. During programming or erasing, high voltages are applied to modify the charge level in the floating gate, allowing data to be written or erased.

Detailed Application Field Plans

The MT29F4G16ABAEAH4:E is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

• MT29F4G08ABADAWP:A
• MT29F4G08ABADAWP:B
• MT29F4G08ABADAWP:C
• MT29F4G08ABADAWP:D

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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