MT29F4G16ABAEAWP:E

Product Overview

Category

MT29F4G16ABAEAWP:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G16ABAEAWP:E offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures reliable and durable data storage.
• Low power consumption: MT29F4G16ABAEAWP:E is designed to consume minimal power, making it suitable for portable devices.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

MT29F4G16ABAEAWP:E is typically packaged in a surface-mount package (SMT) with a specific quantity per reel, usually 250 or 500 units.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F4G16ABAEAWP:E is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase Operations: MT29F4G16ABAEAWP:E supports efficient read, program, and erase operations at the page level.
• Block Management: It incorporates advanced block management algorithms to optimize data storage and improve overall performance.
• Error Correction Code (ECC): The NAND flash memory includes built-in ECC functionality to ensure data integrity and reliability.
• Wear-Leveling: MT29F4G16ABAEAWP:E implements wear-leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Low power consumption makes it suitable for portable devices.
• Reliable performance ensures data integrity and durability.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory technologies.

Working Principles

MT29F4G16ABAEAWP:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. The data is accessed by applying appropriate voltage levels to the control pins and reading or writing the stored charge.

Detailed Application Field Plans

MT29F4G16ABAEAWP:E finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Some alternative models that offer similar functionality to MT29F4G16ABAEAWP:E include: - MT29F4G08ABADAWP:E - MT29F4G16ABADAWP:E - MT29F4G08ABBEAWP:E - MT29F4G16ABBEAWP:E

These models may differ in storage capacity, package type, or other specifications but serve as viable alternatives for different application requirements.

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