MT29F512G08CUCABJ3-10RZ:A

Product Overview

Category

MT29F512G08CUCABJ3-10RZ:A belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CUCABJ3-10RZ:A offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F512G08CUCABJ3-10RZ:A is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
• Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F512G08CUCABJ3-10RZ:A is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 600 megabytes per second (MB/s)

Detailed Pin Configuration

The MT29F512G08CUCABJ3-10RZ:A has a specific pin configuration that enables its proper functioning. The following table provides a detailed overview of the pin assignments:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | RE# | Read Enable | | 7 | WE# | Write Enable | | 8 - 15 | DQ0-DQ7 | Data Input/Output | | 16 | R/B# | Ready/Busy Status | | 17 - 20 | NC | No Connection |

Functional Features

The MT29F512G08CUCABJ3-10RZ:A offers several functional features that enhance its performance and usability:

1. Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
2. Wear-Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.
3. Bad Block Management: It includes mechanisms to identify and manage bad blocks, preventing data loss and maintaining optimal performance.
4. Security Features: The MT29F512G08CUCABJ3-10RZ:A may include security features such as hardware encryption and secure erase functions to protect sensitive data.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption is beneficial for battery-powered devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other storage technologies.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

The MT29F512G08CUCABJ3-10RZ:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate.

During a write operation, the control circuitry applies appropriate voltages to the selected memory cells, modifying the charge on the floating gates to represent the desired data. Conversely, during a read operation, the control circuitry measures the electrical charge on the floating gates to retrieve the stored data.

To ensure efficient data management, wear-leveling algorithms distribute write operations across different memory cells, preventing excessive wear on specific cells and extending the overall lifespan of the device.

Detailed Application Field Plans

The MT29F512G