MT29F64G08AFAAAWP-Z:A TR

Product Overview

Category

MT29F64G08AFAAAWP-Z:A TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08AFAAAWP-Z:A TR offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: It provides reliable and stable performance, making it suitable for demanding applications.
• Compact package: The MT29F64G08AFAAAWP-Z:A TR comes in a compact package, allowing for easy integration into various electronic devices.
• Low power consumption: This NAND flash memory consumes minimal power, contributing to energy efficiency in portable devices.

Packaging/Quantity

The MT29F64G08AFAAAWP-Z:A TR is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Package Type: Surface-Mount Device (SMD)
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Endurance: Up to 10,000 program/erase cycles
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F64G08AFAAAWP-Z:A TR has a specific pin configuration that facilitates its integration into electronic devices. The pinout diagram and corresponding functions are as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (3.3V) | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6-13 | A0-A7 | Address Inputs | | 14 | RE# | Read Enable | | 15 | WE# | Write Enable | | 16-31 | DQ0-DQ15 | Data Inputs/Outputs | | 32 | R/B# | Ready/Busy Status |

Functional Features

The MT29F64G08AFAAAWP-Z:A TR offers several functional features that enhance its performance and usability:

1. Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
2. Bad Block Management: The NAND flash memory includes a bad block management system that identifies and manages defective blocks, enhancing overall reliability.
3. Wear-Leveling: This feature evenly distributes write operations across the memory cells, preventing premature wear and extending the lifespan of the device.
4. Block Erase: The MT29F64G08AFAAAWP-Z:A TR supports block erase operations, allowing for efficient deletion of large amounts of data.
5. Security Features: It may include security features such as hardware encryption and secure erase options to protect sensitive data.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures efficient read and write operations.
• Reliable performance suitable for demanding applications.
• Compact package facilitates integration into various electronic devices.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F64G08AFAAAWP-Z:A TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate.

During write operations, the control circuitry applies appropriate voltages to the memory cells, storing the desired data. Reading involves sensing the electrical charge on the floating gates to retrieve the stored information.

The NAND flash memory operates based on the principles of electrical conductivity and charge retention within the memory cells. It employs various techniques such as error correction codes and wear-leveling algorithms to ensure reliable and efficient data storage and retrieval.

Detailed Application Field Plans

The MT29F64G08AFAAAWP-Z:A TR finds application in a wide range of electronic devices that require high-capacity and reliable data storage