MT29F64G08EBAAAWP-Z:A TR

Product Overview

Category

MT29F64G08EBAAAWP-Z:A TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08EBAAAWP-Z:A TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F64G08EBAAAWP-Z:A TR comes in a small form factor, enabling its integration into compact electronic devices.

Package and Quantity

The MT29F64G08EBAAAWP-Z:A TR is typically packaged in a surface-mount package (SMT) and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount Technology (SMT)
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Pin Configuration

The detailed pin configuration for MT29F64G08EBAAAWP-Z:A TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE#: Chip enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/Busy status
10. DQ0-DQ15: Data input/output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for read and write operations.
• Wear-Leveling: Implements wear-leveling algorithms to evenly distribute write cycles across the memory cells, extending the lifespan of the device.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors that may occur during data transfer.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write cycles before it may become unreliable.
• Cost: NAND flash memory tends to be more expensive compared to other types of memory.

Working Principles

MT29F64G08EBAAAWP-Z:A TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the manipulation of the stored charges.

Detailed Application Field Plans

The MT29F64G08EBAAAWP-Z:A TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Some alternative models to MT29F64G08EBAAAWP-Z:A TR include: - MT29F64G08CBAAAWP-Z:A TR - MT29F64G08EBAAAWP-IT:R TR - MT29F64G08EBAAAWP-IT:E TR - MT29F64G08EBAAAWP-IT:D TR

These alternative models may have slightly different specifications or features but serve a similar purpose in data storage applications.

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