MT29F8G08ABACAH4:C

Product Overview

Category

MT29F8G08ABACAH4:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABACAH4:C offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Compact package: The NAND flash memory is packaged in a small form factor, making it suitable for integration into compact electronic devices.
• Reliable performance: It offers reliable performance with low power consumption and high endurance.

Package and Quantity

MT29F8G08ABACAH4:C is typically available in surface mount packages, such as Ball Grid Array (BGA) or Thin Small Outline Package (TSOP). The quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Pin Configuration

The detailed pin configuration of MT29F8G08ABACAH4:C can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level.
• Read Operation: Facilitates reading of stored data.
• Wear-Leveling Algorithm: Distributes data evenly across memory cells to extend the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Provides data integrity by detecting and correcting errors during read and write operations.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Compact package size makes it suitable for integration into various electronic devices.
• Reliable performance with low power consumption and high endurance ensures long-term usability.

Disadvantages

• Limited lifespan: NAND flash memory has a finite number of program/erase cycles, which can affect its longevity.
• Susceptible to data corruption: Improper handling or power interruptions during read/write operations can lead to data loss or corruption.

Working Principles

MT29F8G08ABACAH4:C utilizes the principles of NAND flash memory technology. It stores data in memory cells organized in a grid-like structure, where each cell represents a bit of information. The data is written and erased using electrical charges applied to the memory cells.

Application Field Plans

MT29F8G08ABACAH4:C finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

• MT29F8G08ABACAH4: This is the base model without any specific variant.
• MT29F8G08ABACAH4-G:A: This variant offers extended temperature range (-40°C to +105°C).
• MT29F8G08ABACAH4-G:B: This variant provides enhanced endurance for high-write applications.

Please note that the above list is not exhaustive, and there may be other alternative models available from different manufacturers.

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