MT29F8G08ABCBBH1-12:B

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in bulk packaging, quantity varies

Specifications

• Model: MT29F8G08ABCBBH1-12:B
• Capacity: 8 Gigabytes (GB)
• Voltage: 3.3V
• Organization: 8 Gb x 1
• Interface: Parallel NAND Flash
• Speed: 12 ns (nanoseconds)
• Temperature Range: -40°C to +85°C
• RoHS Compliant: Yes

Detailed Pin Configuration

The MT29F8G08ABCBBH1-12:B has a total of 48 pins arranged as follows:

```

Pin Name Description

1 VCC Power Supply 2 A0 Address Input 3 A1 Address Input 4 A2 Address Input 5 A3 Address Input 6 A4 Address Input 7 A5 Address Input 8 A6 Address Input 9 A7 Address Input 10 CE# Chip Enable 11 CLE Command Latch Enable 12 RE# Read Enable 13 WE# Write Enable 14 WP# Write Protect 15 R/B# Ready/Busy 16 DQ0 Data Input/Output 17 DQ1 Data Input/Output 18 DQ2 Data Input/Output 19 DQ3 Data Input/Output 20 DQ4 Data Input/Output 21 DQ5 Data Input/Output 22 DQ6 Data Input/Output 23 DQ7 Data Input/Output 24 VSS Ground 25 VCCQ Power Supply for I/O 26 NC No Connection 27 NC No Connection 28 NC No Connection 29 NC No Connection 30 NC No Connection 31 NC No Connection 32 NC No Connection 33 NC No Connection 34 NC No Connection 35 NC No Connection 36 NC No Connection 37 NC No Connection 38 NC No Connection 39 NC No Connection 40 NC No Connection 41 NC No Connection 42 NC No Connection 43 NC No Connection 44 NC No Connection 45 NC No Connection 46 NC No Connection 47 NC No Connection 48 NC No Connection ```

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Support for various data management features

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write operations
• Low power consumption
• Compact package size
• RoHS compliant

Disadvantages

• Limited endurance (limited number of program/erase cycles)
• Higher cost compared to other memory technologies

Working Principles

The MT29F8G08ABCBBH1-12:B is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating gate transistor. The data can be read, written, and erased electronically.

Detailed Application Field Plans

The MT29F8G08ABCBBH1-12:B is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Embedded systems

Detailed and Complete Alternative Models

• MT29F8G08ABACAWP-IT:B
• MT29F8G08ABACAWP-IT:C
• MT29F8G08ABACAWP-IT:D
• MT29F8G08ABACAWP-IT:E
• MT29F8G08ABACAWP-IT:F

These alternative models offer similar specifications and functionality to the MT29F8G08ABCBBH1-12:B, providing flexibility for different application requirements.

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