MT29F8G16ABACAH4-IT:C

Product Overview

Category

MT29F8G16ABACAH4-IT:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F8G16ABACAH4-IT:C offers a storage capacity of 8 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F8G16ABACAH4-IT:C is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F8G16ABACAH4-IT:C is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 8 gigabytes (GB)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)

Detailed Pin Configuration

The MT29F8G16ABACAH4-IT:C follows a standard pin configuration for NAND flash memory devices. The specific pin assignments are as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output lines
10. WP: Write Protect

Please refer to the product datasheet for a detailed pin diagram and additional information.

Functional Features

• Page Program Operation: The MT29F8G16ABACAH4-IT:C supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which allow for efficient erasure of large amounts of data.
• Random Access: The product allows for random access to individual memory cells, enabling quick retrieval of specific data.
• Error Correction Code (ECC): The MT29F8G16ABACAH4-IT:C incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: To extend the lifespan of the memory cells, wear leveling techniques are implemented, distributing write operations evenly across the device.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: Like all NAND flash memory, the MT29F8G16ABACAH4-IT:C has a finite number of program/erase cycles before it may become unreliable.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F8G16ABACAH4-IT:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge stored within it.

During write operations, data is programmed into the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the electrical charge levels in the memory cells and converting them back into digital information.

The device's controller manages the read, write, and erase operations, as well as error correction and wear leveling techniques to ensure reliable performance and extend the lifespan of the memory cells.

Detailed Application Field Plans

The MT29F8G16ABACAH4-IT:C finds applications in various electronic devices that require high-capacity data storage with fast access times. Some specific application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, multimedia content, and user data.
2. Digital cameras: High-speed read and write operations enable quick photo and video capture.
3. Solid-state drives (SSDs): The MT29F8G16ABACAH4-