Micron Technology Inc.
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MT29F8G16ABBCAH4-IT:C TR

MT29F8G16ABBCAH4-IT:C TR

Product Overview

Category

MT29F8G16ABBCAH4-IT:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F8G16ABBCAH4-IT:C TR offers a storage capacity of 8 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick data transfer between the device and the memory.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
  • Compact package: The MT29F8G16ABBCAH4-IT:C TR comes in a compact package, making it suitable for space-constrained electronic devices.
  • Low power consumption: This NAND flash memory consumes minimal power, contributing to energy efficiency in portable devices.

Packaging/Quantity

The MT29F8G16ABBCAH4-IT:C TR is typically packaged in a small surface-mount package. It is available in various quantities, ranging from individual units to bulk packaging for larger-scale production.

Specifications

  • Storage Capacity: 8 GB
  • Interface: NAND
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)
  • Pin Count: 48 pins

Detailed Pin Configuration

  1. VCC
  2. GND
  3. ALE
  4. CLE
  5. CE#
  6. RE#
  7. WE#
  8. R/B#
  9. DQ0
  10. DQ1
  11. DQ2
  12. DQ3
  13. DQ4
  14. DQ5
  15. DQ6
  16. DQ7
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Page Read/Program/Erase Operations: The MT29F8G16ABBCAH4-IT:C TR supports efficient read, program, and erase operations at the page level, allowing for flexible data management.
  • Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
  • Wear-Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.
  • Bad Block Management: It includes a mechanism to identify and manage bad blocks, preventing data loss and maintaining overall performance.

Advantages and Disadvantages

Advantages

  • High storage capacity enables extensive data storage.
  • Fast data transfer rate enhances device performance.
  • Reliable performance ensures data integrity.
  • Compact package suits space-constrained devices.
  • Low power consumption contributes to energy efficiency.

Disadvantages

  • Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F8G16ABBCAH4-IT:C TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where data is stored in individual transistors. These transistors can be electrically programmed and erased, allowing for non-volatile data storage.

Detailed Application Field Plans

The MT29F8G16ABBCAH4-IT:C TR finds applications in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Gaming consoles

Detailed and Complete Alternative Models

  1. MT29F8G08ABACAWP-IT: This model offers a similar storage capacity but comes in a different package type.
  2. MT29F8G16ABBCAH4-IT:B TR: This variant has the same specifications but may have slight differences in performance characteristics.
  3. MT29F8G16ABBCAH4-IT:D TR: Another alternative with identical specifications but potentially varying pricing or availability.

Note: Please refer to the manufacturer's documentation for the most up-to-date information on alternative models.

*Word count:

기술 솔루션에 MT29F8G16ABBCAH4-IT:C TR 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

1. What is the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR has a capacity of 8 gigabytes (GB).

3. What is the interface of the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR uses a parallel interface for data transfer.

4. What is the voltage requirement for the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR operates at a voltage range of 2.7V to 3.6V.

5. What is the operating temperature range of the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR has an operating temperature range of -40°C to +85°C.

6. What is the typical read and write speed of the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR has a typical read speed of 25 megabytes per second (MB/s) and a typical write speed of 10 MB/s.

7. Is the MT29F8G16ABBCAH4-IT:C TR suitable for industrial applications?

Yes, the MT29F8G16ABBCAH4-IT:C TR is designed for industrial applications and can withstand harsh operating conditions.

8. Can the MT29F8G16ABBCAH4-IT:C TR be used in automotive solutions?

Yes, the MT29F8G16ABBCAH4-IT:C TR is automotive-grade and can be used in automotive solutions.

9. Does the MT29F8G16ABBCAH4-IT:C TR support error correction codes (ECC)?

Yes, the MT29F8G16ABBCAH4-IT:C TR supports hardware ECC to ensure data integrity.

10. What is the lifespan of the MT29F8G16ABBCAH4-IT:C TR?

The MT29F8G16ABBCAH4-IT:C TR has a typical lifespan of 100,000 program/erase cycles, ensuring long-term reliability.