MT41K512M8RH-125 V:E

Product Overview

Category

MT41K512M8RH-125 V:E belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications that require fast and efficient data storage and retrieval.

Characteristics

• High-speed operation: The MT41K512M8RH-125 V:E offers fast data transfer rates, allowing for quick access to stored information.
• Large capacity: With a capacity of 512 megabits, this DRAM module can store a significant amount of data.
• Low power consumption: The module is designed to operate efficiently, minimizing power usage.
• Reliable performance: It provides stable and reliable performance, ensuring data integrity.

Package

The MT41K512M8RH-125 V:E is available in a small outline dual in-line memory module (SODIMM) package. This compact form factor makes it suitable for use in laptops and other space-constrained devices.

Essence

The essence of the MT41K512M8RH-125 V:E lies in its ability to provide high-speed and reliable data storage, making it an essential component in modern computing systems.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the requirements of the customer or application.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabits
• Speed: 125 MHz
• Voltage: 1.5V
• Organization: 64M x 8
• Interface: 240-pin SODIMM

Detailed Pin Configuration

The MT41K512M8RH-125 V:E follows the standard pin configuration for DDR3 SDRAM modules. The pinout diagram is as follows:

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Functional Features

• High-speed data transfer: The MT41K512M8RH-125 V:E offers fast data transfer rates, allowing for quick access to stored information.
• Error correction: It incorporates error correction code (ECC) functionality, which helps detect and correct memory errors, ensuring data integrity.
• Auto-refresh capability: The module supports auto-refresh, which helps maintain the stored data without requiring manual intervention.
• Burst mode operation: It supports burst mode operation, enabling efficient data transfer between the memory module and the processor.

Advantages and Disadvantages

Advantages

• Fast data transfer rates
• Large storage capacity
• Low power consumption
• Reliable performance

Disadvantages

• Limited compatibility with older systems that do not support DDR3 SDRAM

Working Principles

The MT41K512M8RH-125 V:E operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When the system requires access to specific data, the memory controller retrieves it from the appropriate memory cells.

Detailed Application Field Plans

The MT41K512M8RH-125 V:E is widely used in various applications, including: - Laptop computers - Desktop computers - Servers - Workstations - Networking equipment - Embedded systems

Detailed and Complete Alternative Models

Some alternative models to the MT41K512M8RH-125 V:E include: - MT41K256M16HA-125 V:E - MT41K1G8RH-125 V:E - MT41K512M16HA-125 V:E - MT41K1G8RH-125 V:E

These alternative models offer similar features and specifications, providing flexibility in choosing the most suitable DRAM module for specific applications.

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