MT46V128M4FN-75:D

Product Overview

Category

MT46V128M4FN-75:D belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

MT46V128M4FN-75:D is available in a small outline dual in-line memory module (SODIMM) package. This compact form factor makes it suitable for use in space-constrained devices.

Essence

The essence of MT46V128M4FN-75:D lies in its ability to provide efficient and reliable data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT46V128M4FN-75:D is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR SDRAM
• Capacity: 128 Megabytes (MB)
• Organization: 4 Megabits x 4
• Speed Grade: 75
• Operating Voltage: 2.5 Volts (V)
• Refresh Rate: 8K cycles/32ms
• Interface: Parallel
• Pin Count: 66

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. NC
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CS#
43. VSS
44. VDD
45. CLK
46. CKE
47. ODT
48. VREF
49. VSS
50. VDD
51. DQS0
52. DQS#0
53. DM0
54. VSS
55. VDD
56. DQS1
57. DQS#1
58. DM1
59. VSS
60. VDD
61. NC
62. VSS
63. VDD
64. VSS
65. VDD
66. VSS

Functional Features

• High-speed data access and transfer
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving operation
• Burst mode for efficient data retrieval
• Error correction code (ECC) support for enhanced data reliability

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data access and transfer rates improve overall system performance.
• Low power consumption helps to extend battery life in portable devices.
• Compact package size enables usage in space-constrained devices.
• Wide operating temperature range ensures reliable operation in various environments.

Disadvantages

• Limited capacity compared to other types of memory, such as solid-state drives (SSDs).
• Relatively higher latency compared to some newer memory technologies.
• Vulnerable to data loss if not properly backed up or protected against power failures.

Working Principles

MT46V128M4FN-75:D operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller sends the appropriate signals to access the desired data location.

Detailed Application Field Plans

MT46V128M4FN-75:D finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Industrial control systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

1. MT46V64M