MT46V128M4TG-5B:F

Product Overview

Category

MT46V128M4TG-5B:F belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Compact size and lightweight
• Compatible with various electronic devices

Package

MT46V128M4TG-5B:F is typically packaged in a small rectangular chip package made of plastic or ceramic material.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval functions for electronic devices.

Packaging/Quantity

MT46V128M4TG-5B:F is usually sold in bulk packaging, with each package containing multiple units of the chip.

Specifications

• Model: MT46V128M4TG-5B:F
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 128 megabits (16 megabytes)
• Speed: 5 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Interface: Synchronous DRAM (SDRAM)
• Pin Count: 54 pins
• Package Type: TSOP II (Thin Small Outline Package)

Detailed Pin Configuration

1. VDD - Power Supply
2. DQ0 - Data Input/Output Bit 0
3. DQ1 - Data Input/Output Bit 1
4. DQ2 - Data Input/Output Bit 2
5. DQ3 - Data Input/Output Bit 3
6. DQ4 - Data Input/Output Bit 4
7. DQ5 - Data Input/Output Bit 5
8. DQ6 - Data Input/Output Bit 6
9. DQ7 - Data Input/Output Bit 7
10. DQ8 - Data Input/Output Bit 8
11. DQ9 - Data Input/Output Bit 9
12. DQ10 - Data Input/Output Bit 10
13. DQ11 - Data Input/Output Bit 11
14. DQ12 - Data Input/Output Bit 12
15. DQ13 - Data Input/Output Bit 13
16. DQ14 - Data Input/Output Bit 14
17. DQ15 - Data Input/Output Bit 15
18. VSS - Ground
19. A0 - Address Bit 0
20. A1 - Address Bit 1
21. A2 - Address Bit 2
22. A3 - Address Bit 3
23. A4 - Address Bit 4
24. A5 - Address Bit 5
25. A6 - Address Bit 6
26. A7 - Address Bit 7
27. A8 - Address Bit 8
28. A9 - Address Bit 9
29. A10 - Address Bit 10
30. A11 - Address Bit 11
31. A12 - Address Bit 12
32. A13 - Address Bit 13
33. A14 - Address Bit 14
34. A15 - Address Bit 15
35. /CAS - Column Address Strobe
36. /RAS - Row Address Strobe
37. /WE - Write Enable
38. /OE - Output Enable
39. /CS - Chip Select
40. VDDQ - Power Supply for I/O Buffers 41-54. NC - No Connection

Functional Features

• High-speed data transfer rate
• Low power consumption
• Easy integration with various electronic devices
• Reliable and stable performance
• Supports burst mode operations
• Built-in error correction capabilities

Advantages

• Fast data access and retrieval speed
• Large storage capacity
• Compatible with a wide range of electronic devices
• Low power consumption
• Error correction capabilities enhance data reliability

Disadvantages

• Volatile memory requires constant power supply
• Susceptible to data loss in case of power failure
• Relatively higher cost compared to other types of memory

Working Principles

MT46V128M4TG-5B:F operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which needs to be refreshed periodically to maintain the stored information.

Detailed Application Field Plans

MT46V128M4TG-5B:F is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models