MT46V16M16P-6T L:F TR

Overview

Product Category: Memory Module
Use: This product is a memory module used in electronic devices for storing and retrieving data.
Characteristics: The MT46V16M16P-6T L:F TR is known for its high-speed performance, reliability, and low power consumption.
Package: The memory module comes in a small form factor package, making it suitable for compact electronic devices.
Essence: The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities.
Packaging/Quantity: The MT46V16M16P-6T L:F TR is typically packaged individually and is available in various quantities.

Specifications

• Type: Synchronous DRAM (SDRAM)
• Density: 256 Megabits
• Organization: 16 Meg x 16
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• RoHS Compliance: Yes

Pin Configuration

The MT46V16M16P-6T L:F TR memory module has the following pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /CLK
40. VSS

Functional Features

• High-speed data transfer rate for efficient data processing.
• Low power consumption, making it suitable for battery-powered devices.
• Reliable and stable performance for data integrity.
• Easy integration into electronic devices due to its small form factor package.

Advantages and Disadvantages

Advantages: - High-speed performance enhances overall system efficiency. - Low power consumption prolongs battery life in portable devices. - Reliable operation ensures data integrity. - Compact package size allows for easy integration into various electronic devices.

Disadvantages: - Limited storage capacity compared to other memory modules. - Higher cost per unit compared to lower-density memory modules.

Working Principles

The MT46V16M16P-6T L:F TR memory module operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a digital format using capacitors to represent binary values. The memory cells are organized in a matrix, with each cell storing a single bit of information. Accessing data from the memory module involves sending commands and addresses to select the desired memory location and transferring data through the data bus.

Detailed Application Field Plans

The MT46V16M16P-6T L:F TR memory module finds applications in various electronic devices, including but not limited to:

1. Personal computers and laptops
2. Servers and data centers
3. Mobile phones and tablets
4. Gaming consoles
5. Automotive electronics
6. Industrial control systems

Its high-speed performance, reliability, and low power consumption make it suitable for these applications where efficient data storage and retrieval are crucial.

Alternative Models

1. MT46V16M16P-6T L:F
2. MT46V16M16P-6T L:G
3. MT46V16M16P-6T L:H
4. MT46V16M16P-6T L:I

These alternative models offer similar specifications and functionality to the MT46V16M16P-6T L:F TR memory module, providing users with options based on their specific requirements.

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