MT46V32M16TG-5B:F TR

Product Overview

Category

MT46V32M16TG-5B:F TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, tablets, and gaming consoles.

Characteristics

• High-speed data access
• Non-volatile memory
• Large storage capacity
• Low power consumption

Package

MT46V32M16TG-5B:F TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT46V32M16TG-5B:F TR is typically packaged in trays or reels, with each containing a specific quantity of memory modules. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 5B (DDR3-1600)
• Operating Voltage: 1.5 Volts
• Interface: 96-ball BGA (Ball Grid Array)

Detailed Pin Configuration

The pin configuration of MT46V32M16TG-5B:F TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. ODT
48. VREF

Functional Features

• High-speed data transfer rate
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast data access speeds improve overall system performance.
• Large storage capacity allows for efficient data handling.
• Low power consumption helps conserve battery life in portable devices.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Sensitive to electrical noise and requires careful circuit design.

Working Principles

MT46V32M16TG-5B:F TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller accesses the specific memory address and transfers data through the data bus.

Detailed Application Field Plans

MT46V32M16TG-5B:F TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT46V32M16TG-5B:F TR are: - MT46V32M16P-5B:F - MT46V32M16BN-5B:F - MT46V32M16P-5B:G - MT46V32M16BN-5B:G

These models offer similar specifications and functionality, providing flexibility in choosing the appropriate memory module for specific requirements.

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