MT46V32M8BG-5B:GTR

Product Overview

Category

MT46V32M8BG-5B:GTR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval capabilities.

Characteristics

• High-density storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable performance
• Compact package size

Package

The MT46V32M8BG-5B:GTR chip is available in a small form factor BGA (Ball Grid Array) package.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

The MT46V32M8BG-5B:GTR chip is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR SDRAM
• Organization: 32M words x 8 bits
• Operating Voltage: 2.5V
• Speed Grade: -5B
• Refresh Rate: 64ms
• Interface: Parallel
• Clock Frequency: 200 MHz
• Data Transfer Rate: 400 Mbps
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V32M8BG-5B:GTR chip has a total of 66 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. BA0
45. BA1
46. RAS#
47. CAS#
48. WE#
49. CKE
50. CS#
51. DM0
52. DM1
53. VSS
54. VDD
55. VDD
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data transfer and access
• On-chip refresh circuitry for maintaining data integrity
• Low power consumption in standby mode
• Auto precharge and power-down modes for power savings
• Burst mode operation for efficient data transfer

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data transfer rates enable quick access to stored information.
• Low power consumption helps in reducing energy usage and extending battery life in portable devices.
• Reliable performance ensures data integrity and system stability.
• Compact package size allows for easy integration into various electronic devices.

Disadvantages

• Limited storage capacity compared to other types of memory technologies like solid-state drives (SSDs).
• Relatively higher latency compared to non-volatile memory options.
• Susceptible to data loss in case of power failure or improper shutdown.

Working Principles

The MT46V32M8BG-5B:GTR operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within the memory cells. These charges need to be refreshed periodically to maintain their integrity. When data is requested, the memory controller activates the appropriate row and column addresses, allowing the data to be read or written.

Detailed Application Field Plans

The MT46V32M8BG-5B:GTR chip finds extensive use in various applications, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Graphics cards - Printers