MT46V64M8CV-5B:J TR

Product Overview

Category

The MT46V64M8CV-5B:J TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size

Package

The MT46V64M8CV-5B:J TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

The MT46V64M8CV-5B:J TR is typically packaged in reels or trays and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 64 Megabit x 8
• Voltage Supply: 3.3V
• Speed Grade: 5B
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP

Detailed Pin Configuration

The MT46V64M8CV-5B:J TR has a total of 54 pins, which are assigned specific functions. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A9
13. A11
14. A13
15. A14
16. A16
17. A18
18. A19
19. A20
20. A21
21. A22
22. A23
23. A24
24. A25
25. A26
26. A27
27. A28
28. A29
29. A30
30. A31
31. A32
32. A33
33. A34
34. A35
35. A36
36. A37
37. A38
38. A39
39. A40
40. A41
41. A42
42. A43
43. A44
44. A45
45. A46
46. A47
47. A48
48. A49
49. A50
50. A51
51. A52
52. A53
53. A54
54. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption helps prolong battery life in portable devices.
• Compact size enables integration into space-constrained electronic devices.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and grounding measures.
• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the finite number of write cycles.

Working Principles

The MT46V64M8CV-5B:J TR operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending address signals to select the desired memory location and reading or writing data through the corresponding data pins.

Detailed Application Field Plans

The MT46V64M8CV-5B:J TR finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. MT46V64M8TG-75:J TR
2. MT46V64M8P-6T IT:F TR
3. MT46V64M8FN-6T IT:A TR
4. MT46V64M8BN-6T IT:G TR
5. MT46V64M8P-6T IT:K TR

These alternative models offer similar functionality and specifications to the MT46V64M8CV-5B:J TR, providing customers with options based on their specific requirements.

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