MT47H256M4CF-25:H

Product Overview

Category

MT47H256M4CF-25:H belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package size

Package

MT47H256M4CF-25:H is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H256M4CF-25:H is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 256 Megabits (32 Megabytes)
• Speed Grade: 25
• Operating Voltage: 1.5V
• Organization: 4 banks x 4,096 rows x 2,048 columns
• Interface: Parallel
• Data Rate: 800 Megabits per second
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H256M4CF-25:H is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. ODT
48. RESET#
49. VDD
50. VDD

Functional Features

• High-speed data transfer
• Error correction capability
• Auto-refresh and self-refresh modes
• Burst mode operation
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package size

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older devices

Working Principles

MT47H256M4CF-25:H operates based on the principles of DDR3 SDRAM technology. It stores digital information in an array of capacitors, which can be accessed and manipulated through various control signals. The data is read from or written to the memory cells using a parallel interface.

Detailed Application Field Plans

MT47H256M4CF-25:H finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to MT47H256M4CF-25:H that offer similar functionality and specifications include: - MT47H128M8CF-25:H - MT47H512M16CF-25:H - MT47H1024M32CF-25:H

These alternative models provide different capacities and organization options to suit specific requirements.

In conclusion, MT47H256M4CF-25:H is a high-performance DDR3 SDRAM memory chip with a compact package size. It offers fast data access, large storage capacity, and low power consumption. While it may have a higher cost compared to other memory technologies, its advantages outweigh the disadvantages. This product finds applications in various electronic devices and has alternative models available for different capacity needs.