Micron Technology Inc.
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MT47H32M8BP-5E:B
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MT47H32M8BP-5E:B

Product Overview

Category

MT47H32M8BP-5E:B belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems and electronic devices for data storage and retrieval purposes.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size
  • Reliable performance

Package

MT47H32M8BP-5E:B is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H32M8BP-5E:B is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 4 Gigabits (32 Megabytes)
  • Organization: 512M words × 8 bits
  • Operating Voltage: 1.5V
  • Speed Grade: PC3-12800 (DDR3-1600)
  • Refresh Rate: 8K cycles/64ms

Detailed Pin Configuration

The pin configuration of MT47H32M8BP-5E:B is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. VSS
  45. DM0
  46. DM1
  47. VCC
  48. VCC

Functional Features

  • High-speed data transfer
  • On-die termination (ODT) for improved signal integrity
  • Auto-refresh and self-refresh modes for power saving
  • Burst mode operation for efficient data access
  • Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

  • Fast and efficient data storage and retrieval
  • Low power consumption
  • Compact package size
  • Reliable performance
  • ECC support for data reliability

Disadvantages

  • Limited capacity compared to other memory technologies
  • Higher cost per unit compared to some alternative models

Working Principles

MT47H32M8BP-5E:B operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller activates the appropriate row and column addresses to access the desired data.

Detailed Application Field Plans

MT47H32M8BP-5E:B finds applications in various electronic devices and computer systems, including but not limited to: - Laptops and notebooks - Desktop computers - Servers - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H32M8BP-5E:B are: - MT41K256M16HA-125:E - K4B2G1646E-BCK0 - H5TC4G63AFR-PBA

These models offer similar specifications and functionalities, providing options for different design requirements.

Word count: 512 words

기술 솔루션에 MT47H32M8BP-5E:B 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of MT47H32M8BP-5E:B in technical solutions:

  1. Question: What is the capacity of the MT47H32M8BP-5E:B memory module?
    Answer: The MT47H32M8BP-5E:B has a capacity of 32 megabits (4 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H32M8BP-5E:B is typically 2.7V to 3.6V.

  3. Question: Can I use this memory module in a mobile device or smartphone?
    Answer: Yes, the MT47H32M8BP-5E:B is suitable for use in mobile devices and smartphones.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H32M8BP-5E:B is a DDR3 SDRAM memory module.

  5. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT47H32M8BP-5E:B supports a maximum clock frequency of 800 MHz.

  6. Question: Can I use multiple MT47H32M8BP-5E:B modules together in a system?
    Answer: Yes, you can use multiple modules to increase the overall memory capacity in a system.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H32M8BP-5E:B does not support ECC functionality.

  8. Question: What is the form factor of this memory module?
    Answer: The MT47H32M8BP-5E:B is a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.

  9. Question: Can I use this memory module in industrial applications?
    Answer: Yes, the MT47H32M8BP-5E:B is suitable for use in various industrial applications.

  10. Question: Is this memory module RoHS (Restriction of Hazardous Substances) compliant?
    Answer: Yes, the MT47H32M8BP-5E:B is RoHS compliant, ensuring it meets environmental standards.

Please note that these answers are based on general information about the MT47H32M8BP-5E:B memory module and may vary depending on specific technical requirements and application scenarios.