MT47H64M16HR-3 L:G TR

Product Overview

Category

MT47H64M16HR-3 L:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Large storage capacity
• Compact size
• Low power consumption

Package

MT47H64M16HR-3 L:G TR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H64M16HR-3 L:G TR is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 64 megabits (8 megabytes)
• Organization: 64M x 16
• Speed: 3 nanoseconds (ns)
• Voltage: 1.8 volts (V)
• Interface: Double Data Rate 2 (DDR2)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H64M16HR-3 L:G TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VDD
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. CK
46. VSS
47. DM0
48. DM1
49. VREF
50. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval, enhancing overall device performance
• Large storage capacity for storing a significant amount of data
• Compact size allows for integration into various electronic devices
• Low power consumption, contributing to energy efficiency

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure
• Relatively higher cost compared to other types of memory

Working Principles

MT47H64M16HR-3 L:G TR operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be refreshed periodically to maintain the stored information. When data is requested, it is accessed by reading the charge stored in the capacitors.

Detailed Application Field Plans

MT47H64M16HR-3 L:G TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to MT47H64M16HR-3 L:G TR include: - MT47H64M16BT-3 L:A TR - MT47H64M16HR-25E:G TR - MT47H64M16HR-3 IT:H TR - MT47H64M16HR-3 IT:E TR

These alternative models offer similar functionality and characteristics, providing options for different requirements and compatibility with various electronic devices.

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