MT48V8M16LFB4-10:G

Product Overview

Category

The MT48V8M16LFB4-10:G belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Reliable performance

Package

The MT48V8M16LFB4-10:G is packaged in a small form factor, such as a ball grid array (BGA) or a thin small outline package (TSOP).

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern computing systems.

Packaging/Quantity

The MT48V8M16LFB4-10:G is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 8 Meg x 16
• Voltage Supply: 2.5V ± 0.2V
• Speed: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 54 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CS4
42. /CS5
43. /CS6
44. /CS7
45. /OE
46. /LB
47. /UB
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VDD

Functional Features

• High-speed data access and transfer
• Support for various memory operations (read, write, refresh)
• Auto-refresh capability to maintain data integrity
• Low power consumption in standby mode
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for large amounts of data to be stored.
• Fast data access and transfer rates improve system performance.
• Low power consumption helps conserve energy.
• Compact package size enables space-efficient designs.
• Reliable performance ensures data integrity.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Requires periodic refresh cycles to maintain data integrity.
• Limited scalability beyond a certain density.

Working Principles

The MT48V8M16LFB4-10:G operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain their charge. When a read or write operation is performed, the memory controller activates the appropriate row and column addresses to access the desired data.

Detailed Application Field Plans

The MT48V8M16LFB4-10:G is widely used in various applications, including: - Personal computers - Servers - Networking equipment - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

1. MT48V8M16LFF4-10:G
2. MT48V8M16LFZ-10:G
3. MT48V8M16LFB5-10:G
4. MT48V8M16LFB4-12:G
5. MT48V8M16LFB4-15:G

These alternative models offer similar specifications and functionality to the MT48V8M16LFB4-10:G, providing options for different performance