N25Q128A13E12A0F TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Surface Mount Technology (SMT) package
• Essence: Advanced flash memory technology
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Manufacturer: NXP Semiconductors
• Model: N25Q128A13E12A0F TR
• Memory Type: Serial NOR Flash
• Memory Size: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time:
  • Sector Erase: 100 milliseconds (typical)
  • Page Program: 0.7 milliseconds (typical)
• Data Retention: Up to 20 years
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The N25Q128A13E12A0F TR has the following pin configuration:

1. VCC: Power supply voltage
2. HOLD: Suspends ongoing data transfer
3. WP: Write Protect, prevents accidental writes
4. GND: Ground
5. IO0: Serial data input/output
6. IO1: Dual/Quad SPI data input/output
7. IO2: Quad SPI data input/output
8. IO3: Quad SPI data input/output
9. CLK: Serial clock input
10. CS: Chip select input

Functional Features

• High-speed read and write operations
• Flexible erase and program options
• Sector-based erasure for efficient memory management
• Protection mechanisms like Write Protect (WP) pin and software protection
• Efficient power management with low standby current
• Reliable data retention and endurance

Advantages and Disadvantages

Advantages: - High-speed data transfer - Large storage capacity - Low power consumption - Reliable data retention - Flexible erase and program options

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per bit compared to some alternatives

Working Principles

The N25Q128A13E12A0F TR is based on Serial NOR Flash technology. It utilizes a Serial Peripheral Interface (SPI) for communication with the host device. The memory cells store data in a non-volatile manner, meaning the data is retained even when power is removed. The device supports high-speed read and write operations, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

The N25Q128A13E12A0F TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, and portable media players.
2. Automotive: Infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS).
3. Industrial: Embedded systems, control units, and IoT devices.
4. Networking: Routers, switches, and network storage devices.
5. Medical: Patient monitoring systems, medical imaging equipment, and diagnostic devices.

Detailed and Complete Alternative Models

1. N25Q064A11ESE40E: 64 Megabit Serial NOR Flash, same manufacturer and interface as N25Q128A13E12A0F TR.
2. S25FL128SAGMFI001: 128 Megabit Serial NOR Flash from Cypress Semiconductor, similar specifications and interface.
3. MX25L12835FM2I-10G: 128 Megabit Serial NOR Flash from Macronix, compatible interface and comparable performance.

These alternative models offer similar functionality and can be considered as replacements for the N25Q128A13E12A0F TR in various applications.

Word count: 500 words