N25Q128A13EF740E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: SOP (Small Outline Package)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time: 4ms/0.5ms (typical)

Detailed Pin Configuration

The N25Q128A13EF740E has a total of 8 pins, which are as follows:

1. Chip Select (/CS): Enables communication with the chip when set to low.
2. Serial Clock (SCLK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the external device.
4. Serial Data Output (SO): Transmits data to the external device.
5. Hold (/HOLD): Pauses ongoing operations without resetting the chip.
6. Write Protect (/WP): Protects the chip from accidental write operations.
7. Ground (GND): Connects to the ground reference.
8. Power Supply (VCC): Provides the operating voltage.

Functional Features

• High-speed Read/Write Operations: Allows for fast data access and storage.
• Sector Erase Capability: Enables selective erasure of specific memory sectors.
• Uniform Block Architecture: Provides flexibility in managing data storage.
• Hardware Write Protection: Prevents unauthorized modification of stored data.
• Deep Power-down Mode: Reduces power consumption during idle periods.

Advantages and Disadvantages

Advantages: - High-speed performance facilitates quick data transfer. - Large storage capacity accommodates a significant amount of data. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited endurance compared to other non-volatile memory technologies. - Relatively higher cost per unit compared to traditional storage options.

Working Principles

The N25Q128A13EF740E is based on the NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of information. Data is stored by applying electrical charges to these cells, which can be read or modified as needed. The Serial Peripheral Interface (SPI) allows for communication between the chip and external devices, enabling data transfer and control operations.

Detailed Application Field Plans

The N25Q128A13EF740E is commonly used in various electronic devices that require non-volatile memory for data storage and retrieval. Some specific application fields include: - Consumer Electronics: Smartphones, tablets, digital cameras, and gaming consoles. - Automotive Systems: Infotainment systems, instrument clusters, and navigation devices. - Industrial Equipment: Robotics, control systems, and data loggers. - Networking Devices: Routers, switches, and network attached storage (NAS) devices.

Detailed and Complete Alternative Models

1. N25Q064A11ESE40F: 64 Megabit (8 Megabyte) capacity, same package and interface.
2. N25Q256A13ESE40F: 256 Megabit (32 Megabyte) capacity, same package and interface.
3. N25Q512A13ESE40F: 512 Megabit (64 Megabyte) capacity, same package and interface.

These alternative models offer different storage capacities while maintaining compatibility with the N25Q128A13EF740E in terms of package type and interface.

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