N25Q128A13EF8C0E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast read and write speeds
  • Low power consumption
  • Reliable and durable
• Package: Integrated Circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Typically sold in trays or reels containing multiple chips

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The N25Q128A13EF8C0E has a total of 8 pins, which are as follows:

1. Chip Select (/CS): Enables communication with the chip when pulled low.
2. Serial Clock (SCLK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to send commands and data to the chip.
4. Serial Data Output (SO): Transmits data from the chip to the host device.
5. Hold (/HOLD): Pauses ongoing operations without resetting the chip.
6. Write Protect (/WP): Protects the chip from accidental writes when pulled low.
7. Ground (GND): Connected to the ground reference of the system.
8. Power Supply (VCC): Provides the required power to the chip.

Functional Features

• High-speed Read and Write Operations: The N25Q128A13EF8C0E offers fast data transfer rates, allowing for quick access to stored information.
• Sector Erase and Program: Individual sectors of the memory can be erased and programmed, providing flexibility in data management.
• Uniform Sector Architecture: The chip is divided into multiple sectors, each with a fixed size, simplifying data organization and retrieval.
• Advanced Security Features: Supports hardware-based protection mechanisms to prevent unauthorized access and ensure data integrity.

Advantages

• Large Storage Capacity: With 128 Megabits of storage, the N25Q128A13EF8C0E can accommodate a significant amount of data.
• Fast Read and Write Speeds: The chip's high-speed operations enable efficient data transfer and retrieval.
• Low Power Consumption: The N25Q128A13EF8C0E is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable and Durable: Flash memory technology ensures reliable performance and long-term data retention.

Disadvantages

• Limited Write Endurance: Like all flash memory, the N25Q128A13EF8C0E has a finite number of erase/write cycles before degradation may occur.
• Higher Cost: Compared to other types of non-volatile memory, flash memory chips tend to be more expensive.

Working Principles

The N25Q128A13EF8C0E utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be read or modified through electrical signals sent via the SPI interface.

Detailed Application Field Plans

The N25Q128A13EF8C0E is widely used in various electronic devices that require non-volatile memory for data storage and retrieval. Some common application fields include: - Consumer Electronics: Smartphones, tablets, digital cameras, and gaming consoles. - Automotive Systems: Infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS). - Industrial Control Systems: Programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers. - Networking Equipment: Routers, switches, and network attached storage (NAS) devices.

Detailed and Complete Alternative Models

• N25Q064A13EF8E0: 64 Megabit (8 Megabyte) capacity variant of the same series.
• N25Q256A13EF8E0: 256 Megabit (32 Megabyte) capacity variant of the same series.
• S25FL128SAGMFI001: A comparable flash memory chip from a different manufacturer.

(Note: The alternative models listed above are for illustrative purposes only and may not represent an exhaustive list of alternatives.)

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