N25Q128A21BF840F TR

Product Overview

Category

The N25Q128A21BF840F TR belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic devices.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 128 megabits (16 megabytes).
• Fast access time: Provides quick read and write operations.
• Serial interface: Communicates with the host device using a serial protocol.
• Low power consumption: Operates efficiently, minimizing energy usage.

Package

The N25Q128A21BF840F TR is available in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The N25Q128A21BF840F TR is typically packaged in reels or trays, with a quantity of multiple units per package.

Specifications

• Memory Capacity: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz
• Erase/Program Time: Varies depending on the operation

Detailed Pin Configuration

The N25Q128A21BF840F TR has a specific pin configuration that enables its proper functioning within a system. The following are the pin descriptions:

1. VCC: Power supply voltage input
2. GND: Ground reference
3. HOLD: Suspends ongoing operations temporarily
4. WP: Write Protect, controls write operations
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Additional serial data input/output
8. SIO3: Additional serial data output
9. CS: Chip Select, enables communication with the device
10. CLK: Serial clock input

Functional Features

• High-speed read and write operations
• Sector erase and byte/page program functionality
• Protection mechanisms to prevent accidental data modification
• Efficient power management features
• Error correction and detection capabilities

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• Compact form factor
• Reliable data retention

Disadvantages

• Limited endurance (number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

The N25Q128A21BF840F TR utilizes flash memory technology to store data. It employs a serial interface, allowing for efficient communication with the host device. The device uses a combination of transistors and floating gate cells to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the cell's electrical characteristics. These altered characteristics are then detected during read operations, allowing the stored data to be retrieved.

Detailed Application Field Plans

The N25Q128A21BF840F TR finds application in various electronic devices, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

• N25Q064A13ESE40F TR
• N25Q256A11EF840E TR
• N25Q512A13EF840E TR
• N25Q00AA13G1240F TR

These alternative models offer different storage capacities, interface options, and other specifications to cater to diverse application requirements.

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