N25Q128A21BSF40F TR

Product Overview

Category

The N25Q128A21BSF40F TR belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The N25Q128A21BSF40F TR retains data even when power is removed.
• High capacity: It has a storage capacity of 128 megabits (16 megabytes).
• Fast access: The device offers high-speed read and write operations.
• Reliable: It has built-in error correction mechanisms to ensure data integrity.
• Low power consumption: The N25Q128A21BSF40F TR is designed to minimize energy usage.

Package

The N25Q128A21BSF40F TR comes in a small form factor package, making it suitable for space-constrained applications. It is commonly available in a surface mount package.

Essence

The essence of the N25Q128A21BSF40F TR lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic devices.

Packaging/Quantity

The N25Q128A21BSF40F TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package can vary, but it is commonly available in quantities of 250 or 500 units.

Specifications

• Memory Capacity: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz
• Erase/Program Time: Varies depending on the operation

Detailed Pin Configuration

The N25Q128A21BSF40F TR has a standard pin configuration for SPI flash memory devices. The following table provides a detailed pin description:

| Pin Name | Function | |----------|----------| | VCC | Power supply voltage | | GND | Ground | | CS# | Chip select | | SCK | Serial clock | | SI | Serial input | | SO | Serial output | | WP# | Write protect | | HOLD# | Hold input |

Functional Features

• High-speed Read/Write: The N25Q128A21BSF40F TR offers fast data transfer rates, allowing for efficient read and write operations.
• Sector Erase: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Page Program: The device allows for programming data in page-sized increments, enhancing flexibility in data storage.
• Protection Mechanisms: The N25Q128A21BSF40F TR incorporates hardware and software protection features to prevent unauthorized access or modification of stored data.
• Error Correction: Built-in error correction algorithms ensure data integrity during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable data retention
• Compact form factor

Disadvantages

• Limited endurance (number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

The N25Q128A21BSF40F TR utilizes the Serial Peripheral Interface (SPI) protocol to communicate with the host device. It stores data in non-volatile memory cells that retain information even when power is removed. The device uses a combination of electronic circuits and firmware algorithms to enable efficient data storage and retrieval.

Detailed Application Field Plans

The N25Q128A21BSF40F TR is widely used in various electronic devices and applications, including but not limited to: - Computers and laptops - Smartphones and tablets - Networking equipment - Automotive systems - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

• N25Q064A13ESF40E TR
• N25Q256A11EF840E TR
• N25Q512A13GSF40G TR
• N25Q00AA13GSF40F TR

These alternative models offer different storage capacities, interface options, and other specifications to cater to diverse application requirements.

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