PC28F128J3F75G

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 75 megabytes per second
• Write Speed: Up to 20 megabytes per second
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The PC28F128J3F75G flash memory IC has a specific pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Ready/Busy or Byte Enable control
9. RY/BY#: Ready/Busy or Byte Enable output
10. WP#: Write protect control
11. RESET#: Reset control
12. NC: No connection

Note: The pin configuration may vary depending on the package type.

Functional Features

• High-speed data transfer with low power consumption
• Reliable and durable non-volatile memory
• Efficient programming and erasing operations
• Advanced error correction and detection mechanisms
• Support for various industry-standard interfaces

Advantages and Disadvantages

Advantages

• Large storage capacity for extensive data requirements
• Fast read/write speeds for quick data access
• Low power consumption for energy-efficient operation
• High endurance for prolonged usage
• Compatibility with standard interfaces for easy integration

Disadvantages

• Relatively higher cost compared to other memory options
• Limited write endurance compared to some newer memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The PC28F128J3F75G flash memory utilizes a floating gate transistor technology. It stores data by trapping electric charges in the floating gate, which alters the transistor's conductive properties. This allows the memory to retain data even when power is removed. The data can be written or erased by applying specific voltage levels to the control pins.

Detailed Application Field Plans

The PC28F128J3F75G flash memory finds applications in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive systems
6. Industrial control systems
7. Embedded systems

Detailed and Complete Alternative Models

1. PC28F128J3D75G: Similar specifications but with different package type
2. PC28F256J3F75G: Higher capacity variant with 256 gigabits
3. PC28F064J3F75G: Lower capacity variant with 64 gigabits
4. PC28F512J3F75G: Higher capacity variant with 512 gigabits

These alternative models provide options based on varying capacity requirements.

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