PC28F640P30T85B TR

Product Overview

Category

PC28F640P30T85B TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High storage capacity: PC28F640P30T85B TR has a capacity of 640 megabits (80 megabytes).
• Fast data transfer rate: It supports high-speed data read and write operations.
• Reliable performance: The flash memory is designed to withstand frequent read/write cycles without degradation.

Package

PC28F640P30T85B TR is available in a small form factor package, commonly known as Thin Small Outline Package (TSOP).

Essence

The essence of PC28F640P30T85B TR lies in its ability to provide reliable and high-capacity data storage in a compact package.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 640 megabits (80 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The PC28F640P30T85B TR flash memory device has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY# Output: Ready/busy status

Functional Features

• High-speed data transfer: PC28F640P30T85B TR supports fast read and write operations, allowing for efficient data access.
• Error correction: The flash memory device incorporates error correction techniques to ensure data integrity and reliability.
• Block erase capability: It allows for erasing large blocks of data simultaneously, improving efficiency in data management.
• Low power consumption: PC28F640P30T85B TR is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact form factor
• Low power consumption

Disadvantages

• Limited endurance (compared to other types of memory)
• Relatively higher cost per unit compared to some alternative models

Working Principles

PC28F640P30T85B TR utilizes the principles of flash memory technology. It consists of floating-gate transistors that can store electrical charges, representing binary data (0s and 1s). When data is written, a high voltage is applied to the gate, trapping electrons in the floating gate. To read the data, the charge level in the floating gate is measured. Erasing the data involves removing the trapped charge from the floating gate.

Detailed Application Field Plans

PC28F640P30T85B TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. PC28F640P30T85A TR: Similar to PC28F640P30T85B TR, but with a different package type.
2. PC28F640P30T85C TR: Higher endurance version of PC28F640P30T85B TR, suitable for applications requiring frequent program/erase cycles.
3. PC28F640P30T85D TR: Lower capacity variant of PC28F640P30T85B TR, suitable for cost-sensitive applications with lower storage requirements.

These alternative models offer similar functionality and compatibility with various systems, providing options based on specific requirements and constraints.

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