PN28F128M29EWHA

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Varies based on manufacturer and customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The PN28F128M29EWHA follows a standard pin configuration for SPI flash memory devices. The detailed pinout is as follows:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer with SPI interface
• Efficient power management with low standby current
• Hardware and software write protection options
• Sector-based erase and byte/page-based programming
• Error correction code (ECC) for enhanced data integrity

Advantages and Disadvantages

Advantages: - High storage capacity for data-intensive applications - Fast read/write speeds for quick data access - Low power consumption for extended battery life - Compact package size for space-constrained designs - Reliable data retention and endurance for long-term use

Disadvantages: - Limited write endurance compared to other memory technologies - Higher cost per unit compared to lower capacity flash memory - Requires additional circuitry for SPI interface implementation

Working Principles

The PN28F128M29EWHA utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. The memory cells consist of floating-gate transistors that can retain charge even when power is removed. Data is written by applying high voltage to the control gate, which traps electrons in the floating gate, altering the cell's electrical state. Reading data involves sensing the electrical state of each memory cell.

Application Field Plans

The PN28F128M29EWHA finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive infotainment systems - Industrial control systems

Alternative Models

1. PN28F128M29EWHA: 128 Megabits, SPI interface
2. PN64F256M29EWHA: 256 Megabits, SPI interface
3. PN16F064M29EWHA: 64 Megabits, SPI interface
4. PN512F512M29EWHA: 512 Megabits, SPI interface

These alternative models offer different capacities while maintaining compatibility with the SPI interface.

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