TE28F160B3TD70A

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast read and write speeds
  • Reliable data retention
  • Low power consumption
• Package: TSOP (Thin Small Outline Package)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Available in trays, with 100 units per tray

Specifications

• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum
• Data Retention: 20 years minimum

Pin Configuration

The TE28F160B3TD70A has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. VCC (Power)
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. RE# (Read Enable)
30. BYTE# (Byte Enable)
31. VPP (Program/Erase Voltage)
32. RP# (Ready/Busy)
33. NC (No Connection)
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations
• Efficient block erase and program operations
• Automatic program and erase algorithms
• Hardware data protection features
• Low power consumption in standby mode
• Software and hardware reset options

Advantages

• Large storage capacity for data-intensive applications
• Fast access times for quick data retrieval
• Reliable data retention for long-term storage
• Low power consumption for energy-efficient devices
• Easy integration into electronic systems

Disadvantages

• Limited erase and program cycles
• Higher cost compared to other memory technologies
• Sensitivity to high temperatures and extreme environmental conditions

Working Principles

The TE28F160B3TD70A is based on the NOR flash memory technology. It utilizes a grid of floating-gate transistors to store digital information. The memory cells are organized into blocks, which can be individually erased or programmed. When reading data, the appropriate voltage levels are applied to the memory cells, and the resulting current flow is detected to determine the stored data.

Detailed Application Field Plans

The TE28F160B3TD70A is commonly used in various electronic devices, including:

1. Mobile phones
2. Tablets
3. Digital cameras
4. Solid-state drives (SSDs)
5. Set-top boxes
6. Automotive electronics
7. Industrial control systems

Alternative Models

If the TE28F160B3TD70A is not available or suitable for a particular application, the following alternative models can be considered:

1. TE28F160C3TD70A
2. TE28F160J3TD70A
3. TE28F160S3TD70A
4. TE28F160B3BD70A

These models offer similar specifications and functionality, providing flexibility in choosing the most appropriate flash memory solution.

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