1N5387BE3/TR8 - Semiconductor Diode
Basic Information Overview
- Category: Semiconductor Diode
- Use: Voltage regulation and protection
- Characteristics: High current capability, low forward voltage drop
- Package: Axial leaded, DO-41 package
- Essence: Regulates voltage and protects circuits from overvoltage
- Packaging/Quantity: Typically available in reels of 500 or 1000 units
Specifications
- Voltage Rating: 5.6V
- Power Dissipation: 5W
- Forward Voltage Drop: 1.5V at 1A
- Operating Temperature Range: -65°C to +175°C
Detailed Pin Configuration
The 1N5387BE3/TR8 is a two-terminal device with an anode and a cathode. The anode is connected to the positive side of the circuit, while the cathode is connected to the negative side.
Functional Features
- Voltage Regulation: Maintains a constant voltage across the diode
- Overvoltage Protection: Safeguards circuits from excessive voltage spikes
- High Current Capability: Can handle significant current flow without damage
Advantages and Disadvantages
Advantages
- Reliable voltage regulation
- Robust protection against overvoltage events
- Low forward voltage drop minimizes power loss
Disadvantages
- Limited voltage regulation range
- May require additional components for precise regulation in some applications
Working Principles
The 1N5387BE3/TR8 operates based on the principle of semiconductor junction behavior. When forward biased, it allows current to flow, but when reverse biased, it blocks the current until the breakdown voltage is reached, providing overvoltage protection.
Detailed Application Field Plans
- Power Supplies: Used for voltage regulation in linear power supplies
- Automotive Electronics: Protects sensitive electronic components from voltage transients
- Industrial Control Systems: Provides overvoltage protection for control circuitry
Detailed and Complete Alternative Models
- 1N5387B: Similar specifications, different packaging
- 1N5388BE3/TR8: Higher voltage rating, compatible package
This comprehensive entry provides detailed information about the 1N5387BE3/TR8 semiconductor diode, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Word Count: 346
기술 솔루션에 1N5387BE3/TR8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the 1N5387BE3/TR8 diode used for?
- The 1N5387BE3/TR8 diode is commonly used as a voltage regulator or surge suppressor in various technical solutions.
What is the maximum voltage and current rating of the 1N5387BE3/TR8 diode?
- The 1N5387BE3/TR8 diode has a maximum voltage rating of 200V and a current rating of 5A.
How does the 1N5387BE3/TR8 diode protect against voltage spikes?
- The 1N5387BE3/TR8 diode clamps excessive voltage spikes by conducting when the voltage exceeds its breakdown voltage, thereby protecting the circuitry downstream.
Can the 1N5387BE3/TR8 diode be used in reverse polarity protection?
- Yes, the 1N5387BE3/TR8 diode can be used to provide reverse polarity protection in electronic circuits.
What are the typical applications of the 1N5387BE3/TR8 diode?
- Typical applications include power supplies, voltage regulators, overvoltage protection, and general-purpose rectification.
Is the 1N5387BE3/TR8 diode suitable for high-power applications?
- Yes, the 1N5387BE3/TR8 diode is suitable for moderate to high-power applications due to its 5A current rating.
What is the temperature range for the 1N5387BE3/TR8 diode?
- The 1N5387BE3/TR8 diode typically operates within a temperature range of -65°C to +175°C.
Can multiple 1N5387BE3/TR8 diodes be connected in parallel for higher current handling?
- Yes, multiple 1N5387BE3/TR8 diodes can be connected in parallel to increase the overall current handling capability.
Does the 1N5387BE3/TR8 diode require a heatsink for certain applications?
- In high-power applications or when operating near the maximum ratings, a heatsink may be necessary to dissipate heat effectively.
Are there any specific layout considerations when using the 1N5387BE3/TR8 diode on a PCB?
- It's important to minimize trace lengths and keep the diode close to the components it is protecting to reduce parasitic inductance and ensure effective transient suppression.