MPF200T-FCSG325E

Product Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High voltage, high current, fast switching speed
• Package: TO-220
• Essence: NPN Silicon Power Transistor
• Packaging/Quantity: Tape and Reel, 1000 pieces per reel

Specifications

• Voltage Rating: 600V
• Current Rating: 2A
• Power Dissipation: 25W
• Collector-Emitter Saturation Voltage: 1.5V (max)
• DC Current Gain: 40 (min) at IC = 500mA, VCE = 10V
• Transition Frequency: 3MHz (typ)
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The MPF200T-FCSG325E transistor has three pins:

1. Base (B): Used to control the flow of current through the transistor.
2. Collector (C): Collects the current from the circuit.
3. Emitter (E): Emits the current to the ground.

Functional Features

• High voltage capability allows for use in various power applications.
• Fast switching speed enables efficient operation in switching circuits.
• Low collector-emitter saturation voltage reduces power dissipation.
• Good DC current gain ensures reliable amplification.

Advantages and Disadvantages

Advantages

• High voltage and current ratings make it suitable for power applications.
• Fast switching speed improves circuit efficiency.
• Low collector-emitter saturation voltage reduces power loss.
• Good DC current gain ensures reliable amplification.

Disadvantages

• Limited transition frequency may restrict its use in high-frequency applications.
• Operating temperature range may not be suitable for extreme environments.

Working Principles

The MPF200T-FCSG325E is an NPN silicon power transistor. It operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows for amplification and switching of electrical signals in various applications.

Detailed Application Field Plans

The MPF200T-FCSG325E transistor can be used in a wide range of applications, including:

1. Power supplies
2. Motor control circuits
3. Audio amplifiers
4. Switching regulators
5. Lighting systems

Detailed and Complete Alternative Models

• 2N3055: Similar power transistor with higher voltage and current ratings.
• TIP31C: Complementary power transistor with lower voltage rating but higher current capability.
• MJE13009: High voltage NPN transistor suitable for power applications.

These alternative models offer similar functionality and can be considered as substitutes for the MPF200T-FCSG325E depending on specific requirements.

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