2N7002BKM,315

Product Overview

The 2N7002BKM,315 is a small-signal MOSFET transistor designed for various electronic applications. This product falls under the category of discrete semiconductors and is commonly used in low-power switching applications. Its characteristics include high-speed switching, low on-state resistance, and compatibility with a wide range of voltage levels. The package type for the 2N7002BKM,315 is SOT-23, and it is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

The 2N7002BKM,315 features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 115mA. It has a low threshold voltage of 1V, making it suitable for low-voltage applications. The device also exhibits a low on-state resistance (RDS(on)) of 5 ohms, contributing to its efficient switching capabilities.

Pin Configuration

The 2N7002BKM,315 follows the standard SOT-23 pin configuration, with three pins: gate (G), drain (D), and source (S). The pinout arrangement is as follows:

S | D | G

Functional Features

This MOSFET transistor offers fast switching speeds, making it ideal for applications requiring rapid on/off transitions. Additionally, its low on-state resistance minimizes power dissipation, enhancing overall efficiency in circuit designs.

Advantages and Disadvantages

Advantages: - High-speed switching capability - Low on-state resistance - Wide voltage compatibility

Disadvantages: - Limited maximum drain-source voltage - Relatively low continuous drain current rating

Working Principles

The 2N7002BKM,315 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel between the drain and source terminals. When a sufficient gate-source voltage is applied, the device enters the conducting state, allowing current to flow from the drain to the source.

Application Field Plans

The 2N7002BKM,315 finds extensive use in low-power switching circuits, such as relay drivers, LED lighting control, and battery management systems. Its fast switching characteristics make it suitable for pulse-width modulation (PWM) applications as well.

Alternative Models

For those seeking alternatives to the 2N7002BKM,315, comparable MOSFET transistors include the 2N7002DW,125 and the DMN2004K-7. These devices offer similar performance characteristics and can serve as substitutes in compatible circuit designs.

In conclusion, the 2N7002BKM,315 is a versatile MOSFET transistor with high-speed switching capabilities and low on-state resistance, making it well-suited for various low-power electronic applications.

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