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BUK6607-55C,118

BUK6607-55C,118

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies and motor control
Characteristics: High voltage capability, low gate charge, ruggedness, high-speed switching
Package: TO-220AB
Essence: Power MOSFET for efficient switching
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Voltage - Drain-Source Breakdown (Max): 55V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 30nC @ 10V

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Low on-resistance
  • Fast switching speed
  • Enhanced ruggedness
  • Low gate charge

Advantages and Disadvantages

Advantages: - Efficient power switching - Reduced power dissipation - Improved system reliability

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

BUK6607-55C,118 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the current flow between the drain and source terminals.

Detailed Application Field Plans

  1. Power supply units
  2. Motor control systems
  3. DC-DC converters
  4. Inverters

Detailed and Complete Alternative Models

  1. IRF540N
  2. STP55NF06L
  3. FQP50N06L

Note: The alternative models listed above are similar power MOSFETs with comparable specifications and characteristics.

This information provides a comprehensive understanding of BUK6607-55C,118, its features, and its application in various electronic systems.