PDTA123JTVL
Product Overview
Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN transistor, high current gain, low voltage drop
Package: SOT-23
Essence: High performance in a compact form
Packaging/Quantity: Available in reels of 3000 units
Specifications
- Type: NPN
- Collector-Emitter Voltage (VCEO): 50V
- Collector Current (IC): 100mA
- Power Dissipation (Ptot): 250mW
- Transition Frequency (ft): 300MHz
- Noise Figure (NF): 4dB
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low noise figure
Advantages
- Compact package
- High transition frequency
- Low power dissipation
Disadvantages
- Limited collector current
- Moderate noise figure
Working Principles
The PDTA123JTVL operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, enabling signal amplification and switching.
Detailed Application Field Plans
The PDTA123JTVL is suitable for various applications including: - Audio amplification circuits - Signal processing circuits - Switching circuits - Oscillator circuits
Detailed and Complete Alternative Models
- BC847B
- 2N3904
- MMBT3904
- BC337
In conclusion, the PDTA123JTVL is a versatile small signal NPN transistor with high performance characteristics, making it suitable for a wide range of electronic applications.
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What is PDTA123JTVL?
- PDTA123JTVL is a high-performance, low-power NPN bipolar junction transistor (BJT) commonly used in various technical solutions.
What are the key specifications of PDTA123JTVL?
- The key specifications include a maximum collector current of 100mA, a maximum collector-base voltage of 50V, and a maximum power dissipation of 200mW.
In what types of technical solutions is PDTA123JTVL commonly used?
- PDTA123JTVL is commonly used in applications such as amplifiers, switching circuits, and sensor interfaces due to its low power consumption and high performance.
What are the typical operating conditions for PDTA123JTVL?
- The typical operating conditions include a collector current of 10mA, a collector-emitter voltage of 20V, and an ambient temperature range of -55°C to 150°C.
How does PDTA123JTVL compare to similar transistors in terms of performance?
- PDTA123JTVL offers superior performance in terms of low power consumption, high gain, and reliable operation, making it a preferred choice in many technical solutions.
Are there any specific application notes or guidelines for using PDTA123JTVL in technical designs?
- Yes, the manufacturer provides detailed application notes and guidelines for incorporating PDTA123JTVL into various technical solutions, ensuring optimal performance and reliability.
Can PDTA123JTVL be used in low-voltage applications?
- Yes, PDTA123JTVL is suitable for low-voltage applications due to its low collector-base voltage and efficient power management capabilities.
What are the recommended circuit configurations for maximizing the performance of PDTA123JTVL?
- Commonly used circuit configurations include common emitter, common base, and common collector setups, each offering specific advantages based on the application requirements.
Does PDTA123JTVL require any special handling or storage considerations?
- PDTA123JTVL should be handled with standard ESD precautions and stored in a dry, non-corrosive environment to maintain its electrical characteristics.
Where can I find comprehensive technical documentation and support for PDTA123JTVL?
- Comprehensive technical documentation, including datasheets, application notes, and support resources, can be obtained from the manufacturer's official website or authorized distributors.