PSMN2R0-60ES,127

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Voltage Rating: 60V - Current Rating: 100A - On-Resistance: 2.0 mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for improved efficiency - Enhanced thermal performance for reliability - Avalanche energy specified - Suitable for high frequency applications

Advantages and Disadvantages: - Advantages: - High efficiency - Low on-resistance - Fast switching speed - Enhanced thermal performance - Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static electricity

Working Principles: The PSMN2R0-60ES,127 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models: - IRF3205 - FDP8878 - STP80NF55-06

This comprehensive entry provides a detailed overview of the PSMN2R0-60ES,127 Power MOSFET, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.