BUK1M200-50SGTD,51

Product Overview

Category

The BUK1M200-50SGTD,51 belongs to the category of power MOSFETs.

Use

This product is primarily used in electronic circuits for switching applications, where it acts as a high-speed switch.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Avalanche energy specified
• RoHS compliant

Package

The BUK1M200-50SGTD,51 is available in a TO-252 (DPAK) package.

Essence

The essence of this product lies in its ability to efficiently control and switch high voltages in electronic circuits.

Packaging/Quantity

The BUK1M200-50SGTD,51 is typically packaged in reels or tubes, with a quantity of 2,500 units per reel/tube.

Specifications

• Drain-source voltage: 200V
• Continuous drain current: 50A
• On-resistance: 0.025Ω
• Gate threshold voltage: 2.5V
• Total gate charge: 60nC
• Avalanche energy: 400mJ
• Operating temperature range: -55°C to +175°C

Detailed Pin Configuration

The BUK1M200-50SGTD,51 has three pins:

1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load or circuit being controlled.
3. Source (S): Connected to the ground or common reference point.

Functional Features

• High voltage capability allows for use in various applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables quick response times.
• Low gate charge reduces power consumption and heat generation.
• Avalanche energy specification ensures safe operation under high voltage conditions.
• RoHS compliance guarantees environmental friendliness.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• RoHS compliant

Disadvantages

• Limited operating temperature range (-55°C to +175°C)
• Relatively high total gate charge (60nC)

Working Principles

The BUK1M200-50SGTD,51 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a sufficient voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By controlling the gate voltage, the MOSFET can be switched on or off, allowing or blocking the current flow.

Detailed Application Field Plans

The BUK1M200-50SGTD,51 finds applications in various fields, including: 1. Power supplies 2. Motor control 3. Lighting systems 4. Industrial automation 5. Automotive electronics

Detailed and Complete Alternative Models

1. BUK9M200-50SG - Similar specifications, but with higher avalanche energy rating (600mJ).
2. BUK7M200-50SG - Similar specifications, but with lower on-resistance (0.02Ω).
3. BUK5M200-50SG - Similar specifications, but with lower drain-source voltage (150V).

(Note: The above alternative models are provided for reference purposes and may have slight variations in characteristics.)

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