BUK751R6-30E,127
Product Overview
Category
The BUK751R6-30E,127 belongs to the category of power MOSFETs.
Use
It is commonly used in applications requiring high power switching and efficient energy management.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Enhanced thermal performance
Package
The BUK751R6-30E,127 is typically available in a TO-220AB package.
Essence
This MOSFET is essential for controlling high-power circuits with minimal power loss.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on supplier specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 75A
- On-Resistance (RDS(on)): 6 mΩ
- Power Dissipation (PD): 200W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The BUK751R6-30E,127 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Suitable for high-frequency switching applications
- Robustness against thermal stress
Advantages and Disadvantages
Advantages
- Efficient power management
- Reduced heat dissipation
- High reliability
- Compact design
Disadvantages
- Sensitivity to electrostatic discharge
- Limited voltage tolerance
Working Principles
The BUK751R6-30E,127 operates based on the principle of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.
Detailed Application Field Plans
Motor Control
The MOSFET can be utilized in motor control systems for efficient and precise speed regulation.
Power Supplies
It is suitable for use in high-power switch-mode power supply designs, ensuring optimal energy conversion.
Lighting Systems
In lighting applications, the MOSFET enables effective control of LED drivers and dimming circuits.
Detailed and Complete Alternative Models
- IRF3205
- FDP8870
- STP80NF70
In conclusion, the BUK751R6-30E,127 power MOSFET offers high-performance characteristics suitable for various power management applications, with its efficient design and robust functionality making it a preferred choice in the industry.
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기술 솔루션에 BUK751R6-30E,127 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum drain-source voltage of BUK751R6-30E,127?
- The maximum drain-source voltage of BUK751R6-30E,127 is 30V.
What is the continuous drain current rating of BUK751R6-30E,127?
- The continuous drain current rating of BUK751R6-30E,127 is 75A.
What type of package does BUK751R6-30E,127 come in?
- BUK751R6-30E,127 comes in a TO-220AB package.
What are the typical applications for BUK751R6-30E,127?
- BUK751R6-30E,127 is commonly used in automotive and industrial applications such as motor control, power management, and DC-DC converters.
What is the on-resistance of BUK751R6-30E,127?
- The on-resistance of BUK751R6-30E,127 is typically 3.8mΩ.
Is BUK751R6-30E,127 suitable for high-frequency switching applications?
- Yes, BUK751R6-30E,127 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
Does BUK751R6-30E,127 require a heat sink for thermal management?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal management of BUK751R6-30E,127.
What is the gate threshold voltage of BUK751R6-30E,127?
- The gate threshold voltage of BUK751R6-30E,127 is typically 2.5V.
Can BUK751R6-30E,127 be used in parallel to increase current handling capability?
- Yes, BUK751R6-30E,127 can be used in parallel to increase current handling capability in high-current applications.
Are there any specific layout considerations when using BUK751R6-30E,127 in a circuit?
- It is important to minimize parasitic inductance and ensure proper gate drive to optimize the performance of BUK751R6-30E,127 in a circuit.