NXP USA Inc.
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MRF8S21200HR5

MRF8S21200HR5

Introduction

The MRF8S21200HR5 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: RF Transistor
  • Use: Power amplification in RF applications
  • Characteristics: High power handling, high frequency operation
  • Package: Ceramic package
  • Essence: Power amplification in high-frequency RF systems
  • Packaging/Quantity: Individual units

Specifications

  • Frequency Range: 2110 - 2170 MHz
  • Power Output: 220 Watts
  • Voltage: 32 Volts
  • Current: 14 Amps
  • Gain: 17 dB
  • Efficiency: 55%

Detailed Pin Configuration

The MRF8S21200HR5 features a detailed pin configuration with specific connections for input, output, biasing, and thermal management. Refer to the datasheet for the complete pinout details.

Functional Features

  • High power handling capability
  • Broadband operation
  • High efficiency
  • Excellent linearity
  • Thermally enhanced package for improved heat dissipation

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency range
  • High efficiency
  • Reliable performance
  • Enhanced thermal management

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal design for optimal performance

Working Principles

The MRF8S21200HR5 operates on the principle of amplifying RF signals with high power and efficiency. It utilizes advanced semiconductor technology to achieve high gain and linearity while maintaining thermal stability during operation.

Detailed Application Field Plans

The MRF8S21200HR5 is ideally suited for use in: - Base station power amplifiers - Wireless infrastructure - RF communication systems - Radar systems - Test equipment

Detailed and Complete Alternative Models

  • MRF8S18260HSR3
  • MRF7S21170HSR5
  • MRF6VP41KH

In conclusion, the MRF8S21200HR5 is a high-power RF transistor with exceptional performance characteristics suitable for a wide range of RF applications.

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기술 솔루션에 MRF8S21200HR5 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is MRF8S21200HR5?

    • MRF8S21200HR5 is a high-power RF transistor designed for use in applications such as radar, industrial heating, and medical equipment.

  2. What is the maximum power output of MRF8S21200HR5?

    • The maximum power output of MRF8S21200HR5 is 1200 watts.

  3. What frequency range does MRF8S21200HR5 cover?

    • MRF8S21200HR5 covers a frequency range of 2110 to 2170 MHz.

  4. What are the typical applications for MRF8S21200HR5?

    • Typical applications for MRF8S21200HR5 include base station amplifiers, repeaters, and other high-power RF systems.

  5. What is the operating voltage of MRF8S21200HR5?

    • The operating voltage of MRF8S21200HR5 is typically around 50 volts.

  6. What are the key features of MRF8S21200HR5?

    • Key features of MRF8S21200HR5 include high power gain, high efficiency, and ruggedness for reliable performance in demanding environments.

  7. What cooling requirements does MRF8S21200HR5 have?

    • MRF8S21200HR5 requires efficient thermal management due to its high power output, typically using heat sinks and fans.

  8. Is MRF8S21200HR5 suitable for pulsed or continuous wave (CW) operation?

    • MRF8S21200HR5 is suitable for both pulsed and CW operation, making it versatile for different system requirements.

  9. What are the recommended matching networks for MRF8S21200HR5?

    • Recommended matching networks for MRF8S21200HR5 can be found in the datasheet provided by the manufacturer.

  10. Are there any special handling considerations for MRF8S21200HR5 during installation?

    • Special handling considerations may include proper grounding, ESD protection, and following recommended soldering techniques to ensure optimal performance and reliability.