ON Semiconductor
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2N6517RLRAG
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2N6517RLRAG

Product Overview

The 2N6517RLRAG belongs to the category of bipolar junction transistors (BJTs) and is commonly used for amplification and switching applications. This transistor exhibits characteristics such as high current capability, low saturation voltage, and fast switching speed. It is typically packaged in a small plastic package and is available in various quantities.

Specifications

  • Maximum Collector-Emitter Voltage: 60V
  • Maximum Collector Current: 3A
  • Power Dissipation: 1W
  • Transition Frequency: 100MHz
  • Package Type: TO-92

Detailed Pin Configuration

The 2N6517RLRAG transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed

Advantages and Disadvantages

Advantages

  • High current capability
  • Low saturation voltage
  • Fast switching speed

Disadvantages

  • Limited power dissipation capability
  • Sensitivity to temperature variations

Working Principles

The 2N6517RLRAG operates based on the principles of controlling the flow of current between its collector and emitter terminals through the application of a small current at its base terminal. This allows it to amplify or switch electronic signals with high efficiency.

Detailed Application Field Plans

This transistor is widely used in audio amplifiers, signal amplification circuits, and switching applications in electronic devices. Its high current capability makes it suitable for use in power control circuits and motor drive applications.

Detailed and Complete Alternative Models

Some alternative models to the 2N6517RLRAG include: - 2N4401 - BC547 - 2N2222

In conclusion, the 2N6517RLRAG transistor is a versatile component that finds extensive use in various electronic applications due to its high current capability, fast switching speed, and low saturation voltage. While it has limitations in power dissipation and temperature sensitivity, its functional features make it a popular choice for amplification and switching purposes.

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기술 솔루션에 2N6517RLRAG 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the 2N6517RLRAG transistor used for?

    • The 2N6517RLRAG is a general-purpose PNP bipolar junction transistor (BJT) commonly used in amplification and switching applications.

  2. What are the key specifications of the 2N6517RLRAG transistor?

    • The 2N6517RLRAG has a maximum collector-emitter voltage of 60V, a collector current of 0.5A, and a power dissipation of 0.625W.

  3. How can I identify the pinout of the 2N6517RLRAG transistor?

    • The pinout of the 2N6517RLRAG is typically Emitter-Base-Collector (EBC), with the flat side facing towards you and the pins down, the left pin is the emitter, the middle pin is the base, and the right pin is the collector.

  4. What are some common applications of the 2N6517RLRAG transistor?

    • The 2N6517RLRAG can be used in audio amplifiers, signal processing circuits, voltage regulators, and other general-purpose electronic circuits.

  5. What are the typical operating conditions for the 2N6517RLRAG transistor?

    • The 2N6517RLRAG operates within a temperature range of -65°C to 150°C and is suitable for use in various electronic systems.

  6. What are the recommended biasing and operating conditions for the 2N6517RLRAG transistor?

    • The 2N6517RLRAG is typically biased in the active region and operated with appropriate base current and collector-emitter voltage to achieve the desired amplification or switching characteristics.

  7. Can the 2N6517RLRAG be used in high-frequency applications?

    • While the 2N6517RLRAG can function at moderate frequencies, it may not be suitable for very high-frequency applications due to its transition frequency and capacitance characteristics.

  8. What are the considerations for driving the 2N6517RLRAG in a switching application?

    • When using the 2N6517RLRAG in a switching application, it's important to ensure proper base current drive and minimize switching times to reduce power dissipation and improve efficiency.

  9. Are there any specific precautions to be taken when soldering the 2N6517RLRAG transistor?

    • It's important to follow proper ESD (electrostatic discharge) handling procedures and avoid excessive heat during soldering to prevent damage to the transistor.

  10. Where can I find detailed technical information and application notes for the 2N6517RLRAG transistor?

    • Detailed technical information, including datasheets, application notes, and reference designs for the 2N6517RLRAG, can be found on the manufacturer's website or through authorized distributors.