KSC2682YSTU

Product Overview

Category: Transistor
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-92
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 1000 units per pack

Specifications

• Collector-Emitter Voltage (VCEO): 400V
• Collector-Base Voltage (VCBO): 700V
• Emitter-Base Voltage (VEBO): 9V
• Collector Current (IC): 500mA
• Power Dissipation (PD): 625mW
• Transition Frequency (ft): 30MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High voltage capability
• Low leakage current
• Fast switching speed
• Suitable for audio amplification and general switching applications

Advantages

• Robust construction
• Wide operating temperature range
• Versatile applications in electronic circuits

Disadvantages

• Limited current handling capacity compared to power transistors
• Sensitive to overvoltage conditions

Working Principles

The KSC2682YSTU is an NPN transistor that operates by controlling the flow of current between the collector and emitter terminals through the base terminal. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter, enabling amplification or switching functions.

Detailed Application Field Plans

1. Audio Amplification: The transistor can be used in audio amplifier circuits due to its high voltage capability and low leakage current.
2. Switching Applications: It can be employed in various electronic switches due to its fast switching speed and robust construction.

Detailed and Complete Alternative Models

1. 2N3904
2. BC547
3. 2N2222
4. PN2222

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This entry provides comprehensive information about the KSC2682YSTU transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.