ON Semiconductor
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MMT10B350T3G
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MMT10B350T3G

Introduction

The MMT10B350T3G is a high-performance power transistor designed for use in various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Power Transistor
  • Use: Amplification and Switching in Electronic Circuits
  • Characteristics: High Power Handling, Low Saturation Voltage, Fast Switching Speed
  • Package: TO-220AB
  • Essence: Silicon NPN Transistor
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 10A
  • Power Dissipation (PD): 35W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High Collector-Emitter Breakdown Voltage
  • Low Saturation Voltage
  • Fast Switching Speed
  • Excellent Linearity of hFE

Advantages and Disadvantages

Advantages

  • High Power Handling Capability
  • Low Saturation Voltage Reduces Power Losses
  • Fast Switching Speed Enables High-Frequency Operation

Disadvantages

  • Sensitive to Overcurrent Conditions
  • Limited Operating Temperature Range

Working Principles

The MMT10B350T3G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its layers to amplify or switch electronic signals.

Detailed Application Field Plans

The MMT10B350T3G is suitable for a wide range of applications, including: - Power Amplifiers - Switching Circuits - Motor Control Systems - Voltage Regulators - LED Drivers

Detailed and Complete Alternative Models

  • MMT10B350T4G
  • MMT12B400T3G
  • MMT8B300T3G
  • MMT10B350T5G

In conclusion, the MMT10B350T3G power transistor offers high performance and versatility for various electronic applications, making it a valuable component in modern electronic designs.

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기술 솔루션에 MMT10B350T3G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is MMT10B350T3G?

    • MMT10B350T3G is a high-performance, 10A, 350V Schottky rectifier diode.

  2. What are the key features of MMT10B350T3G?

    • The key features include low forward voltage drop, high current capability, and high surge capacity.

  3. In what technical solutions can MMT10B350T3G be used?

    • MMT10B350T3G can be used in power supplies, inverters, converters, and motor control applications.

  4. What are the advantages of using MMT10B350T3G in technical solutions?

    • The advantages include improved efficiency, reduced heat dissipation, and compact design due to its high performance.

  5. What are the temperature specifications for MMT10B350T3G?

    • MMT10B350T3G has a wide operating temperature range from -65°C to 175°C.

  6. Is MMT10B350T3G suitable for high-frequency applications?

    • Yes, MMT10B350T3G is suitable for high-frequency applications due to its fast switching capability.

  7. Does MMT10B350T3G have any certifications or compliances?

    • MMT10B350T3G is compliant with RoHS and is halogen-free.

  8. What are the typical applications where MMT10B350T3G excels?

    • MMT10B350T3G excels in applications such as solar panel bypass diodes, freewheeling diodes, and reverse battery protection.

  9. Can MMT10B350T3G handle high surge currents?

    • Yes, MMT10B350T3G is designed to handle high surge currents effectively.

  10. Where can I find detailed technical specifications for MMT10B350T3G?

    • Detailed technical specifications for MMT10B350T3G can be found in the product datasheet available on the manufacturer's website.