ON Semiconductor
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MUN5138T1G
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MUN5138T1G

Product Overview

Category

The MUN5138T1G belongs to the category of NPN Bipolar Power Transistors.

Use

It is commonly used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low spread of dynamic parameters
  • Very high switching speed
  • Extremely low on-resistance

Package

The MUN5138T1G is typically available in a small, surface-mount package for easy integration into circuit designs.

Essence

This transistor is essential for controlling the flow of current in electronic devices and ensuring efficient operation.

Packaging/Quantity

The MUN5138T1G is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 0.5A
  • Power Dissipation (PD): 625mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MUN5138T1G typically has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • Fast switching speed
  • High voltage capability
  • Low on-resistance

Advantages

  • Suitable for high-speed switching applications
  • Compact surface-mount package
  • Low spread of dynamic parameters

Disadvantages

  • Limited maximum collector current compared to some alternative models
  • Relatively lower collector-emitter voltage rating

Working Principles

The MUN5138T1G operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.

Detailed Application Field Plans

The MUN5138T1G is widely used in: - Switching power supplies - LED lighting applications - Motor control circuits - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the MUN5138T1G include: - MUN5137T1G - MUN5139T1G - MUN5140T1G

In conclusion, the MUN5138T1G is a versatile NPN Bipolar Power Transistor with high voltage capability and fast switching speed, making it suitable for various electronic applications requiring efficient current control.

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기술 솔루션에 MUN5138T1G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is MUN5138T1G?

    • MUN5138T1G is a high-speed, low-power NPN transistor used in various technical solutions.

  2. What are the key features of MUN5138T1G?

    • The key features of MUN5138T1G include high-speed switching, low collector-emitter saturation voltage, and low power dissipation.

  3. In what technical solutions can MUN5138T1G be used?

    • MUN5138T1G can be used in applications such as amplifiers, switching circuits, and signal processing.

  4. What is the maximum collector current of MUN5138T1G?

    • The maximum collector current of MUN5138T1G is 500mA.

  5. What is the typical collector-emitter saturation voltage of MUN5138T1G?

    • The typical collector-emitter saturation voltage of MUN5138T1G is 0.2V at 10mA collector current.

  6. Is MUN5138T1G suitable for high-frequency applications?

    • Yes, MUN5138T1G is suitable for high-frequency applications due to its high-speed switching capability.

  7. What is the operating temperature range of MUN5138T1G?

    • The operating temperature range of MUN5138T1G is -55°C to 150°C.

  8. Does MUN5138T1G require external heat sinking?

    • In most cases, MUN5138T1G does not require external heat sinking due to its low power dissipation.

  9. Can MUN5138T1G be used in battery-powered devices?

    • Yes, MUN5138T1G's low power dissipation makes it suitable for use in battery-powered devices.

  10. Where can I find the detailed datasheet for MUN5138T1G?

    • The detailed datasheet for MUN5138T1G can be found on the manufacturer's website or through authorized distributors.