SS26T3G

Product Overview

Category: Schottky Barrier Rectifier
Use: Power rectification in electronic circuits
Characteristics: High efficiency, low forward voltage drop, fast switching
Package: SMC (DO-214AB)
Essence: Efficient power rectification
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 350mV @ 2A
• Speed: Fast recovery

Detailed Pin Configuration

1. Anode
2. Cathode

Functional Features

• High efficiency
• Low forward voltage drop
• Fast switching speed
• Low leakage current

Advantages

• Reduced power loss
• Improved system efficiency
• Enhanced thermal performance

Disadvantages

• Limited reverse voltage capability
• Sensitivity to overvoltage conditions

Working Principles

SS26T3G operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed, resulting in lower forward voltage drop and faster switching compared to standard PN-junction diodes.

Detailed Application Field Plans

SS26T3G is widely used in various electronic circuits such as: - Switching power supplies - Voltage clamping circuits - Reverse polarity protection - Low voltage rectification

Detailed and Complete Alternative Models

1. SS34T3G
2. SS56T3G
3. SS76T3G
4. SS106T3G

This comprehensive entry provides an in-depth understanding of the SS26T3G, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.